SCHEMBL273305

SCHEMBL273305

CCc1cccc([SiH2]O)c1C(C)C

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 6/20 0.42
GABRB2 P47870 5/20 0.42
LMNA P02545 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
HTT P42858 1/20 0.33
ALOX15 P16050 1/20 0.32
ALOX12 P18054 1/20 0.32
ANPEP P15144 3/20 0.31
DPP4 P27487 2/20 0.31
GABRG2 P18507 1/20 0.31
GABRB3 P28472 1/20 0.31
DAO P14920 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9734348 0.80 GABRA1 (0.50) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1
SCHEMBL6114437 0.76 GABRA1 (0.46) GABRA1GABRB2L3MBTL1
SCHEMBL9336892 0.75 GABRA1 (0.52) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1
SCHEMBL9745359 0.75 GABRA1 (0.46) GABRA1GABRB2HTTANPEPDPP4
SCHEMBL2522784 0.75 GABRA1 (0.46) GABRA1GABRB2ANPEPDPP4DAO
SCHEMBL3088973 0.72 GABRA1 (0.43) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1
SCHEMBL11883134 0.72 GABRA1 (0.43) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1
SCHEMBL2519258 0.71 GABRA1 (0.48) GABRA1GABRB2HTTALOX15ALOX12
SCHEMBL18843526 0.71 GABRA1 (0.52) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1
SCHEMBL21736785 0.71 GABRA1 (0.52) GABRA1GABRB2LMNASMN1; SMN2L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 128 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2026-04-14 US disclosed
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-09 US disclosed
US-12504688-B2 Negative photosensitive resin composition and method for manufacturing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-23 US disclosed
US-20250370339-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-04 US disclosed
US-20250362601-A1 Photosensitive Resin Composition, Method Of Manufacturing Pattern Cured Film, Cured Film, Interlayer Insulating Film, Cover Coat Layer, Surface Protective Film, And Electronic Component HD MICROSYSTEMS LTD (JP) 2025-11-27 US disclosed
US-20250341778-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-11-06 US disclosed
US-12405198-B2 Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device RESONAC CORPORATION (JP) 2025-09-02 US disclosed
US-12386259-B2 Negative-type photosensitive resin composition and method for producing polyimide and cured relief pattern using same ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-08-12 US disclosed
US-12386257-B2 Photosensitive resin composition, method of manufacturing pattern cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2025-08-12 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed
US-20100092879-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2010-04-15 US disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
EP-2133743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART Hitachi Chemical DuPont Microsystems, Ltd. (JP) 2009-12-16 EP disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 GABRA1 186/4885GABRB2 311/4885LMNA 1962/4885
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component ARCN1, P4HA1, COL1A1 GABRA1 892/4885GABRB2 1014/4885LMNA 1465/4885
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME CD79B, ITGA1, PTK2 GABRA1 66/4885GABRB2 170/4885LMNA 3565/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.