SCHEMBL2522528

SCHEMBL2522528

Cc1c(CC(C)C)cccc1[SiH2]O

nearest known ligand 0.52

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 2/20 0.52
GABRB2 P47870 2/20 0.52
ESR1 P03372 1/20 0.33
KCNH2 Q12809 1/20 0.33
ELANE P08246 1/20 0.32
CTSG P08311 1/20 0.32
PDCD1 Q15116 1/20 0.31
CD274 Q9NZQ7 1/20 0.31
KDM4E B2RXH2 1/20 0.30
USP2 O75604 1/20 0.30
HPGD P15428 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1918647 0.82 GABRA1 (0.52) GABRA1GABRB2ELANECTSG
SCHEMBL22781148 0.80 GABRA1 (0.62) GABRA1GABRB2ESR1KCNH2ELANE
SCHEMBL2519258 0.79 GABRA1 (0.48) GABRA1GABRB2ELANECTSG
SCHEMBL2522784 0.79 GABRA1 (0.46) GABRA1GABRB2PDCD1CD274
SCHEMBL2520038 0.76 DAO (0.35) GABRA1GABRB2ESR1ELANECTSG
SCHEMBL258675 0.75 GABRA1 (0.63) GABRA1GABRB2ELANECTSGKDM4E
SCHEMBL11677650 0.74 GABRA1 (0.56) GABRA1GABRB2ESR1HSD17B10
SCHEMBL2524117 0.73 CYP3A4 (0.41) ELANECTSG
SCHEMBL28829955 0.72 GABRA1 (0.54) GABRA1GABRB2ESR1KCNH2ELANE
SCHEMBL2524190 0.71 LMNA (0.46) GABRA1GABRB2HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9786576-B2 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device HITACHI CHEMICAL COMPANY, LTD (JP) 2017-10-10 US disclosed
US-20170165879-A1 RESIN PRECURSOR, RESIN COMPOSITION CONTAINING SAME, POLYIMIDE RESIN MEMBRANE, RESIN FILM, AND METHOD FOR PRODUCING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2017-06-15 US disclosed
US-9274422-B2 Photosensitive resin composition, method for forming pattern-cured film using photosensitive resin composition, and electronic component HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2016-03-01 US disclosed
US-20140120462-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN-CURED FILM USING PHOTOSENSITIVE RESIN COMPOSITION, AND ELECTRONIC COMPONENT HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2014-05-01 US disclosed
EP-2221666-B1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, AND SEMICONDUCTOR DEVICE HITACHI CHEMICAL CO LTD (JP) 2013-09-18 EP disclosed
US-20110250396-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE RESONAC CORPORATION (JP) 2011-10-13 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed