SCHEMBL2525305

SCHEMBL2525305

CCCCc1ccccc1[SiH](O)O

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.47
CYP3A4 P08684 1/20 0.44
CYP2D6 P10635 1/20 0.44
CYP2C9 P11712 1/20 0.44
ALOX5 P09917 1/20 0.42
PTGS2 P35354 1/20 0.42
TYR P14679 2/20 0.40
TLR8 Q9NR97 1/20 0.38
BID P55957 3/20 0.37
MCL1 Q07820 3/20 0.37
BCL2L1 Q07817 2/20 0.37
BAK1 Q16611 2/20 0.37
KAT8 Q9H7Z6 2/20 0.37
IAPP P10997 1/20 0.37
PPARG P37231 1/20 0.37
PPARA Q07869 1/20 0.37
EP300 Q09472 1/20 0.37
KAT2A Q92830 1/20 0.37
KAT2B Q92831 1/20 0.37
KAT5 Q92993 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1780725 0.88 LIPG (0.37) LIPGALOX5PTGS2IAPPPPARG
SCHEMBL3482404 0.85 LIPG (0.44) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL17785953 0.82 LIPG (0.42) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL13714249 0.82 LIPG (0.44) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL4530303 0.80 MPO (0.44)
SCHEMBL6114399 0.80 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL6841740 0.80 ALDH1A1 (0.35) LIPG
SCHEMBL4533827 0.80 TAAR1 (0.41)
SCHEMBL3482161 0.80 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL1917938 0.79 GABRA1 (0.46) CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115151868-A Photosensitive resin composition, method for sorting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device 昭和电工材料株式会社 2022-10-04 CN disclosed
WO-2021215374-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED FILM, CURED FILM, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTION FILM, AND ELECTRONIC COMPONENT HDマイクロシステムズ株式会社 (JP) 2021-10-28 WO disclosed
WO-2021070232-A1 POLYIMIDE PRECURSOR, RESIN COMPOSITION, PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING PATTERNED CURED FILM, CURED FILM, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE-PROTECTIVE FILM, AND ELECTRONIC COMPONENT HDマイクロシステムズ株式会社 2021-04-15 WO disclosed
WO-2020071204-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-04-09 WO disclosed
WO-2020070924-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED PATTERN, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-04-09 WO disclosed
WO-2020071422-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR PATTERNED CURED FILM, CURED FILM, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTION FILM, AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-04-09 WO disclosed
WO-2020071437-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING PATTERN-CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATION FILM, COVER COAT LAYER, SURFACE PROTECTION FILM, AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-04-09 WO disclosed
WO-2020071201-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED PRODUCT, CURED PRODUCT, INTERLAYER INSULATING FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-04-09 WO disclosed
WO-2020031240-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED FILM, CURED FILM, INTERLAYER INSULATION FILM, COVER COAT LAYER, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT 日立化成デュポンマイクロシステムズ株式会社 2020-02-13 WO disclosed
US-9786576-B2 Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device HITACHI CHEMICAL COMPANY, LTD (JP) 2017-10-10 US disclosed
EP-2221666-B1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, AND SEMICONDUCTOR DEVICE HITACHI CHEMICAL CO LTD (JP) 2013-09-18 EP disclosed
US-20110250396-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE RESONAC CORPORATION (JP) 2011-10-13 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed