SCHEMBL252883

SCHEMBL252883

C=CCC(=O)NC(=O)CC=C

nearest known ligand 0.39

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.39
MAPT P10636 2/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
ALDH1A1 P00352 2/20 0.33
MAPK1 P28482 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
FAAH O00519 1/20 0.31
CACNA1B Q00975 1/20 0.31
APBA1 Q02410 1/20 0.31
KMT2A Q03164 1/20 0.31
NQO2 P16083 1/20 0.31
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL175574 1.00 TSHR (0.39) TSHRMAPTSMN1; SMN2ALDH1A1MAPK1
SCHEMBL1193962 0.86
SCHEMBL14842938 0.84
SCHEMBL5138203 0.84
SCHEMBL14785886 0.82
SCHEMBL8211211 0.82 TSHR (0.32) TSHRMAPTSMN1; SMN2ALDH1A1MAPK1
SCHEMBL28710644 0.80 ALOX15 (0.35) TSHRMAPTSMN1; SMN2ALDH1A1MAPK1
SCHEMBL8291484 0.79
SCHEMBL1839325 0.79
SCHEMBL6147435 0.78 SMN1; SMN2 (0.48) TSHRMAPTSMN1; SMN2ALDH1A1FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 496 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240192601-A1 PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2024-06-13 US claimed
US-20210294212-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2021-09-23 US claimed
EP-1811339-B1 Pattern forming method FUJIFILM CORP (JP) 2021-03-17 EP claimed
EP-2756353-B1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORP (JP) 2019-05-01 EP claimed
US-9170489-B2 Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device FUJIFILM CORPORATION (JP) 2015-10-27 US claimed
EP-2756353-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2014-07-23 EP claimed
US-20140193749-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-10 US claimed
WO-2013039243-A1 PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-21 WO claimed
US-12044967-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-23 US disclosed
US-20240241444-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-18 US disclosed
US-12038689-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-16 US disclosed
US-12025919-B2 Method of storing photoresist coated substrates and semiconductor substrate container arrangement TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-07-02 US disclosed
US-20240210826-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2024-06-27 US disclosed
US-20240201589-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-06-20 US disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20070172769-A1 Pattern forming method FUJIFILM CORPORATION (JP) 2007-07-26 US disclosed
EP-1811339-A1 Pattern forming method Fujifilm Corporation (JP) 2007-07-25 EP disclosed
EP-1764652-A2 Positive resist composition and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240201589-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE ACTR3, ACTR2, RER1 TSHR 1610/4885MAPT 604/4885SMN1; SMN2 3436/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.