SCHEMBL25564002

SCHEMBL25564002

CCC(CC)(OC(C)=O)c1ccc(F)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 3/20 0.40
KDM4E B2RXH2 1/20 0.38
MAPT P10636 4/20 0.38
MEN1 O00255 3/20 0.38
KMT2A Q03164 3/20 0.38
SMN1; SMN2 Q16637 3/20 0.38
NPC1 O15118 1/20 0.38
XBP1 P17861 1/20 0.38
MAPK1 P28482 1/20 0.38
HTT P42858 1/20 0.38
RAB9A P51151 1/20 0.38
RIPK1 Q13546 2/20 0.37
L3MBTL1 Q9Y468 1/20 0.36
HTR7 P34969 1/20 0.36
LMNA P02545 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
ALDH1A1 P00352 3/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25564041 0.86 CES2 (0.42) KDM4EMAPTMEN1KMT2ACYP1A2
SCHEMBL14827335 0.83 KCNN4 (0.36) KCNN4KDM4EMAPTMEN1KMT2A
SCHEMBL25564011 0.82 CYP4F2 (0.37) RIPK1
SCHEMBL25563998 0.82 KDM4E (0.41) KCNN4KDM4EMAPTMEN1KMT2A
SCHEMBL10234508 0.81 CYP2C19 (0.46) KCNN4MAPTKMT2ACYP1A2CYP2C19
SCHEMBL25564013 0.81 KCNN4 (0.40) KCNN4RAB9ARIPK1HPGDHDAC3
SCHEMBL14827412 0.81 RIPK1 (0.44) KCNN4KDM4EMAPTMEN1KMT2A
SCHEMBL25564019 0.80 KCNN4 (0.46) KCNN4MAPTMEN1KMT2ARIPK1
SCHEMBL25564056 0.80 HDAC3 (0.45) KMT2ANPC1RAB9AL3MBTL1LMNA
Ammonia Solution, Strong SCHEMBL11492425 0.77 KDM4E (0.38) KCNN4KDM4EMAPTMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed