SCHEMBL25564221

SCHEMBL25564221

CC(=O)OC1(c2ccc(OC(F)(F)F)cc2)CC2CCCCC2C1

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 7/20 0.43
SLC6A3 Q01959 5/20 0.43
EPHX2 P34913 9/20 0.41
EPHX1 P07099 2/20 0.41
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
POLB P06746 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
P2RX3 P56373 1/20 0.39
SLC6A2 P23975 1/20 0.39
FAAH O00519 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25564211 0.85 SLC6A4 (0.40) SLC6A4SLC6A3EPHX2EPHX1SLC6A2
SCHEMBL25564206 0.84 CCR1 (0.41) SLC6A4SLC6A3EPHX2KDM4EALDH1A1
SCHEMBL25564148 0.82 SLC6A4 (0.49) SLC6A4SLC6A3EPHX2SLC6A2
SCHEMBL25564204 0.82 DRD2 (0.41) ALDH1A1POLB
SCHEMBL25564205 0.82 SLC6A4 (0.43) SLC6A4SLC6A3EPHX2EPHX1SLC6A2
SCHEMBL25564249 0.81 SLC6A4 (0.51) SLC6A4SLC6A3EPHX2EPHX1KDM4E
SCHEMBL25564209 0.75 SLC6A4 (0.43) SLC6A4SLC6A3EPHX2SLC6A2
SCHEMBL25564229 0.72 ADORA3 (0.39) SLC6A4SLC6A3SLC6A2
SCHEMBL25564288 0.71 ADORA3 (0.40) SLC6A4SLC6A3SLC6A2
SCHEMBL25564153 0.69 SLC6A4 (0.37) SLC6A4SLC6A3EPHX2SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230367213-A1 MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230194986-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-22 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed