SCHEMBL2578321

SCHEMBL2578321

C=C(C)C(=O)O[Si](OCC)(OCC)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.41
MAPT P10636 2/20 0.41
ELANE P08246 1/20 0.40
KMT2A Q03164 2/20 0.36
MEN1 O00255 1/20 0.36
THRB P10828 1/20 0.35
HPGD P15428 1/20 0.34
TSHR P16473 2/20 0.33
GLA P06280 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
KDM4E B2RXH2 1/20 0.33
POLB P06746 1/20 0.33
APEX1 P27695 1/20 0.33
HTT P42858 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CASP1 P29466 1/20 0.33
CES2 O00748 1/20 0.32
CES1 P23141 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28890772 0.86 ELANE (0.46) ALDH1A1MAPTELANEKMT2AHPGD
SCHEMBL19858483 0.85 ALDH1A1 (0.39) ALDH1A1MAPTELANEKMT2AMEN1
SCHEMBL28278508 0.83 THRB (0.43) ALDH1A1MAPTELANEKMT2AMEN1
SCHEMBL2579122 0.81 ELANE (0.42) ALDH1A1MAPTELANEKMT2AHPGD
SCHEMBL19858538 0.81 ALDH1A1 (0.39) ALDH1A1MAPTELANEKMT2AMEN1
SCHEMBL2848784 0.80 ALDH1A1 (0.38) ALDH1A1MAPTKMT2AMEN1HPGD
SCHEMBL2579938 0.79 THRB (0.40) ALDH1A1MAPTKMT2AMEN1THRB
SCHEMBL236261 0.77 ALDH1A1 (0.41) ALDH1A1MAPTELANEKMT2AMEN1
SCHEMBL234085 0.77 ALDH1A1 (0.41) ALDH1A1MAPTELANEKMT2AMEN1
Methacrylic Acid SCHEMBL10711923 0.77 MAPT (0.40) ALDH1A1MAPTELANEKMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed