SCHEMBL26057587

SCHEMBL26057587

COC(Oc1ccc(-c2cc(-c3ccc(OC(OC)C(C)(C)C)cc3)c(C)c(-c3ccc(OC(OC)C(C)(C)C)cc3)c2)cc1)C(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ MAP4K4 O95819 1/20 0.33
▸ NPC1 O15118 1/20 0.32
▸ TP53 P04637 1/20 0.32
▸ MAPK1 P28482 1/20 0.32
▸ CASP3 P42574 1/20 0.32
▸ RAB9A P51151 1/20 0.32
▸ SMN1; SMN2 Q16637 1/20 0.32
▸ SENP8 Q96LD8 1/20 0.32
▸ SENP7 Q9BQF6 1/20 0.32
▸ SENP6 Q9GZR1 1/20 0.32
▸ NT5E P21589 1/20 0.31
▸ ALKBH3 Q96Q83 1/20 0.31
▸ ABL1 P00519 2/20 0.30
▸ ABCB1 P08183 2/20 0.30
▸ BCR P11274 2/20 0.30
▸ ERN1 O75460 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23432887 0.80 PRKAB2 (0.34) MAP4K4NPC1TP53MAPK1CASP3
SCHEMBL23598316 0.76 ACHE (0.44) NPC1RAB9A
SCHEMBL21189178 0.68 MAPK1 (0.32) MAPK1
SCHEMBL20048179 0.68 PPARG (0.41) NPC1TP53MAPK1RAB9ASMN1; SMN2
SCHEMBL23443671 0.67 ALDH1A3 (0.56) SMN1; SMN2
SCHEMBL6697875 0.67 ALDH1A1 (0.39) —
SCHEMBL19646186 0.66 AOC3 (0.32) —
SCHEMBL6697835 0.66 MAPT (0.36) —
SCHEMBL21235238 0.66 SLC6A4 (0.41) —
SCHEMBL19428100 0.66 PPARG (0.41) RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 — — WO disclosed
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