SCHEMBL2618581

SCHEMBL2618581

CC(C)(C)OC(=O)C1CCN(S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)CC1

nearest known ligand 0.41

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 1/20 0.41
TP53 P04637 2/20 0.39
ALDH1A1 P00352 6/20 0.34
TSHR P16473 2/20 0.34
MAPT P10636 2/20 0.34
HSD17B10 Q99714 2/20 0.34
MEN1 O00255 3/20 0.34
KMT2A Q03164 3/20 0.34
POLB P06746 1/20 0.34
STS P08842 1/20 0.34
HPGD P15428 2/20 0.33
PKM P14618 1/20 0.32
EPHX2 P34913 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
RECQL P46063 1/20 0.32
SMN1; SMN2 Q16637 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15219458 0.87 HRH3 (0.40) HRH3TP53ALDH1A1TSHRMAPT
SCHEMBL18220793 0.82 TP53 (0.34) TP53ALDH1A1TSHRMAPTHSD17B10
SCHEMBL12071829 0.80 TSHR (0.44) ALDH1A1TSHRMAPTMEN1KMT2A
SCHEMBL2618580 0.79 ALDH1A1 (0.41) ALDH1A1MAPTKMT2APOLBHPGD
SCHEMBL9609367 0.78 USP2 (0.42) MAPTSTSSMN1; SMN2
SCHEMBL12464844 0.77 MEN1 (0.39) ALDH1A1TSHRMAPTHSD17B10MEN1
SCHEMBL12399639 0.77 ALDH1A1 (0.36) TP53ALDH1A1TSHRMAPTHSD17B10
SCHEMBL12399482 0.75 TSHR (0.35) TP53ALDH1A1TSHRMAPTHSD17B10
SCHEMBL17409262 0.74 ALDH1A1 (0.36) TP53ALDH1A1TSHRMAPTHSD17B10
SCHEMBL20599526 0.74 TP53 (0.49) HRH3TP53ALDH1A1TSHRMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2019-04-02 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9411230-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-08-09 US disclosed
US-9411230-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-08-09 US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-28 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed
US-7592126-B2 Positive resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20090075202-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-03-19 US disclosed
US-20090075202-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-03-19 US disclosed
US-7465528-B2 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-12-16 US disclosed
US-7465528-B2 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-12-16 US disclosed
US-7449573-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2008-11-11 US disclosed
US-7449573-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2008-11-11 US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE RER1, RAD51, TERB1 HRH3 2611/4885TP53 4310/4885ALDH1A1 2091/4885
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film ACTR3, RXRA, RARA HRH3 2574/4885TP53 2292/4885ALDH1A1 1688/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.