SCHEMBL2631349

SCHEMBL2631349

CCOC(C)Oc1ccc(C(C)C(C)C)cc1

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.39
NPSR1 Q6W5P4 2/20 0.33
LTB4R Q15722 1/20 0.33
LTB4R2 Q9NPC1 1/20 0.33
NQO1 P15559 1/20 0.32
AKR1C3 P42330 1/20 0.31
AKR1C2 P52895 1/20 0.31
BCHE P06276 1/20 0.31
ACHE P22303 1/20 0.31
PTGS2 P35354 1/20 0.31
SLC7A5 Q01650 1/20 0.31
ALDH1A1 P00352 1/20 0.30
TSHR P16473 1/20 0.30
GAA P10253 1/20 0.30
MAPK1 P28482 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3852488 0.86 LMNA (0.52) LMNANQO1TSHR
SCHEMBL23185429 0.86 LMNA (0.37) LMNANPSR1LTB4RLTB4R2NQO1
SCHEMBL18746070 0.85 LMNA (0.39) LMNANPSR1LTB4RLTB4R2NQO1
SCHEMBL15869183 0.85 LMNA (0.42) LMNANPSR1LTB4RLTB4R2NQO1
SCHEMBL4053420 0.85 LMNA (0.42) LMNALTB4RLTB4R2NQO1MAPK1
SCHEMBL196665 0.85 LMNA (0.42) LMNANPSR1LTB4RLTB4R2NQO1
SCHEMBL15869176 0.85 LMNA (0.42) LMNANPSR1LTB4RLTB4R2NQO1
SCHEMBL2631348 0.84 CYP1A2 (0.32)
SCHEMBL13184035 0.82 EPHX1 (0.33) NPSR1LTB4RLTB4R2NQO1SLC7A5
SCHEMBL22882724 0.82 LMNA (0.37) LMNANPSR1LTB4RLTB4R2NQO1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11740555-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-08-29 US disclosed
US-11675267-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-06-13 US disclosed
US-11561471-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-24 US disclosed
US-20210311392-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-10-07 US disclosed
US-20210286261-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-09-16 US disclosed
US-8158326-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-17 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8003294-B2 disulfoneamines as acid generators capable of generating an acid upon irradiation with actinic ray or radiation; use in making semiconductors, printed circuits; improve Post Exposure Bake temperature dependency and exposure latitude FUJIFILM CORPORATION (JP) 2011-08-23 US disclosed
US-7718344-B2 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2010-05-18 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090075202-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-03-19 US disclosed
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-09-11 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080220371-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION RARA, RARB, RARG LMNA 1699/4885NPSR1 1720/4885LTB4R 2400/4885
US-20210286261-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, GAR1, REV1 LMNA 1699/4885NPSR1 1596/4885LTB4R 1065/4885
US-11740555-B2 Resist composition and method for producing resist pattern RER1, GAR1, REV1 LMNA 1699/4885NPSR1 1596/4885LTB4R 1065/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.