Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL3295924 | 1.00 | — | — | |
| Water SCHEMBL17800811 | 1.00 | — | — | |
| Water SCHEMBL9983734 | 1.00 | — | — | |
| Water SCHEMBL23003536 | 1.00 | — | — | |
| Water SCHEMBL2059442 | 1.00 | — | — | |
| Water SCHEMBL23062411 | 1.00 | — | — | |
| Water SCHEMBL16238293 | 0.89 | — | — | |
| Water SCHEMBL23671959 | 0.89 | — | — | |
| Water SCHEMBL20591196 | 0.89 | — | — | |
| Water SCHEMBL20637960 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 602 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260122879-A1 | SEMICONDUCTOR DEDVICE AND METHOD FOR FABRICATING THE SAME | SK HYNIX INC (KR) | 2026-04-30 | — | — | US | claimed |
| CN-119997632-B | Transistor type photoelectric detector with high sensitivity and easy starting | 南京信息工程大学 | 2025-06-13 | — | — | CN | claimed |
| CN-119997632-A | Transistor type photoelectric detector with high sensitivity and easy starting | 南京信息工程大学 | 2025-05-13 | — | — | CN | claimed |
| CN-119421509-A | Transistor based on light regulation and control and preparation method thereof | 东北师范大学 | 2025-02-11 | — | — | CN | claimed |
| CN-115497831-A | Method for optimizing amorphous indium gallium zinc oxide thin film transistor interface at room temperature | 西安工程大学 | 2022-12-20 | — | — | CN | claimed |
| CN-115449749-A | Method for optimizing threshold voltage stability of indium gallium zinc oxide thin film transistor deposited at room temperature | 西安工程大学 | 2022-12-09 | — | — | CN | claimed |
| CN-115132848-A | High-power-density IGZO thin film transistor and manufacturing method thereof | 南京邮电大学 | 2022-09-30 | — | — | CN | claimed |
| CN-115084276-A | Amorphous oxide semiconductor thin film transistor and preparation method thereof | 南京邮电大学 | 2022-09-20 | — | — | CN | claimed |
| CN-112599420-B | Preparation method of indium-gallium-zinc-oxygen-based multilayer structure thin film transistor | 绵阳惠科光电科技有限公司 | 2022-08-26 | — | — | CN | claimed |
| CN-109378274-B | Method for preparing different types of indium gallium zinc oxide thin film transistors | 吉林建筑大学 | 2022-04-22 | — | — | CN | claimed |
| CN-104112755-A | Flip chip solid-state light-emitting display | HONGFUJIN PREC IND SHENZHEN | 2014-10-22 | — | — | CN | claimed |
| CN-103980905-A | Novel etching solution used in oxide material system, and etching method and application thereof | FOSHAN INST SUN YAT SEN UNIVERSITY | 2014-08-13 | — | — | CN | claimed |
| CN-102336082-B | Transfer structure and method of manufacturing transfer structure | PRIME VIEW INT CO LTD | 2014-03-12 | — | — | CN | claimed |
| CN-103366671-A | Light emitting element display pixel | LIANSHENG CHINA TECHNOLOGY CO | 2013-10-23 | — | — | CN | claimed |
| CN-102110407-B | Pixel driving circuit, electric discharge method, data read-in method and drive display method | BOE TECHNOLOGY GROUP CO LTD | 2012-12-12 | — | — | CN | claimed |
| CN-102651455-A | OLED (organic light-emitting diode) device, AMOLED (active matrix organic light-emitting diode) device and manufacturing method of AMOLED device | BOE TECHNOLOGY GROUP CO LTD | 2012-08-29 | — | — | CN | claimed |
| CN-102437178-A | Thin film transistor and manufacturing method thereof | NINGBO INST MAT TECH & ENG CAS | 2012-05-02 | — | — | CN | claimed |
| CN-102336082-A | Transfer structure and method of manufacturing transfer structure | PRIME VIEW INT CO LTD | 2012-02-01 | — | — | CN | claimed |
| CN-102280578-A | Flexible resistive nonvolatile memory based on amorphous multi-element metal oxide | — | 2011-12-14 | — | — | CN | claimed |
| CN-102110407-A | Pixel driving circuit, electric discharge method, data read-in method and drive display method | BOE TECHNOLOGY GROUP CO LTD | 2011-06-29 | — | — | CN | claimed |