SCHEMBL2735010

SCHEMBL2735010

CCCCS(=O)(=O)NS(=O)(=O)CCN

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RELA Q04206 4/20 0.43
ALDH1A1 P00352 3/20 0.37
CA2 P00918 3/20 0.37
MAPT P10636 2/20 0.37
HPGD P15428 2/20 0.37
CA1 P00915 2/20 0.37
NPC1 O15118 1/20 0.37
S1PR2 O95136 1/20 0.37
S1PR4 O95977 1/20 0.37
LMNA P02545 1/20 0.37
TP53 P04637 1/20 0.37
POLB P06746 1/20 0.37
XBP1 P17861 1/20 0.37
S1PR1 P21453 1/20 0.37
MAPK1 P28482 1/20 0.37
AGTR1 P30556 1/20 0.37
HTT P42858 1/20 0.37
RAB9A P51151 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL239451 0.88 HPGD (0.44) RELAALDH1A1CA2MAPTHPGD
SCHEMBL2735014 0.86 RELA (0.40) RELAALDH1A1CA2MAPTHPGD
SCHEMBL15177331 0.83 HPGD (0.41) RELAALDH1A1CA2MAPTHPGD
SCHEMBL8885972 0.83 LMNA (0.45) ALDH1A1HPGDLMNATP53MAPK1
SCHEMBL301013 0.80 FAAH (0.50) RELACA2HPGDCA1KDM4E
SCHEMBL3897533 0.79 CA2 (0.48) RELAALDH1A1CA2MAPTHPGD
SCHEMBL6501307 0.78 FAAH (0.54) RELACA2HPGDKDM4ETSHR
SCHEMBL10226704 0.78 FAAH (0.54) RELACA2HPGDKDM4ETSHR
SCHEMBL12639756 0.77 FAAH (0.38) RELAALDH1A1CA2MAPTHPGD
SCHEMBL3016236 0.76 HPGD (0.39) RELAALDH1A1CA2MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8877969-B2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2014-11-04 US disclosed
US-8877969-B2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2014-11-04 US disclosed
US-8785104-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-22 US disclosed
US-8785104-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-22 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
EP-2034361-A2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition Fujifilm Corporation (JP) 2009-03-11 EP disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1906248-A1 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-04-02 EP disclosed