Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RELA | Q04206 | 4/20 | 0.40 |
| ▸ | CA2 | P00918 | 4/20 | 0.37 |
| ▸ | HPGD | P15428 | 3/20 | 0.37 |
| ▸ | CA1 | P00915 | 3/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 2/20 | 0.37 |
| ▸ | LMNA | P02545 | 2/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.37 |
| ▸ | S1PR4 | O95977 | 1/20 | 0.37 |
| ▸ | TP53 | P04637 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | XBP1 | P17861 | 1/20 | 0.37 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | AGTR1 | P30556 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL239451 | 0.88 | HPGD (0.44) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL2735010 | 0.86 | RELA (0.43) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL15177331 | 0.83 | HPGD (0.41) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL301013 | 0.80 | FAAH (0.50) | RELACA2HPGDCA1KDM4E | |
| SCHEMBL3897533 | 0.79 | CA2 (0.48) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL6501307 | 0.78 | FAAH (0.54) | RELACA2HPGDKDM4EFAAH | |
| SCHEMBL10226704 | 0.78 | FAAH (0.54) | RELACA2HPGDKDM4EFAAH | |
| SCHEMBL12639756 | 0.77 | FAAH (0.38) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL3016236 | 0.76 | HPGD (0.39) | RELACA2HPGDCA1ALDH1A1 | |
| SCHEMBL15958664 | 0.76 | FAAH (0.46) | RELACA2HPGDCA1KDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8877969-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8877969-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8785104-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8785104-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1906241-A1 | Resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |