Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.44 |
| ▸ | NAAA | Q02083 | 1/20 | 0.38 |
| ▸ | SLC1A3 | P43003 | 3/20 | 0.38 |
| ▸ | SLC1A2 | P43004 | 3/20 | 0.38 |
| ▸ | SLC1A1 | P43005 | 3/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | PARP15 | Q460N3 | 2/20 | 0.36 |
| ▸ | PARP10 | Q53GL7 | 2/20 | 0.36 |
| ▸ | SPHK1 | Q9NYA1 | 4/20 | 0.34 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2739897 | 0.98 | LMNA (0.42) | LMNANAAASLC1A3SLC1A2SLC1A1 | |
| SCHEMBL9132826 | 0.84 | LMNA (0.55) | LMNASLC1A3SLC1A2SLC1A1ALDH1A1 | |
| SCHEMBL8895551 | 0.84 | LMNA (0.55) | LMNASLC1A3SLC1A2SLC1A1ALDH1A1 | |
| SCHEMBL2900647 | 0.84 | LMNA (0.55) | LMNASLC1A3SLC1A2SLC1A1ALDH1A1 | |
| SCHEMBL14665862 | 0.82 | ALDH1A1 (0.45) | LMNANAAASLC1A3SLC1A2SLC1A1 | |
| SCHEMBL2742122 | 0.81 | LMNA (0.52) | LMNASLC1A3SLC1A2SLC1A1ALDH1A1 | |
| SCHEMBL14982775 | 0.80 | ALDH1A1 (0.46) | LMNANAAASLC1A3SLC1A2SLC1A1 | |
| SCHEMBL697497 | 0.77 | — | — | |
| SCHEMBL17481381 | 0.77 | LMNA (0.44) | LMNANAAASLC1A3SLC1A2SLC1A1 | |
| SCHEMBL17928598 | 0.77 | L3MBTL1 (0.43) | LMNAALDH1A1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-05-20 | — | — | US | disclosed |
| US-9188857-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20130252181-A1 | RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON | MITSUBISHI RAYON CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-8476401-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8114949-B2 | (Meth)acrylate, polymer and resist composition | MITSUBISHI RAYON CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8088875-B2 | (Meth)acrylate, polymer and resist composition | MITSUBISHI RAYON CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-8049042-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-20110144295-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20090226851-A1 | (METH)ACRYLATE, POLYMER AND RESIST COMPOSITION | MITSUBISHI RAYON CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20080032241-A1 | Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2008-02-07 | — | — | US | disclosed |
| US-20080003529-A1 | (Meth)Acrylate, Polymer and Resist Composition | MITSUBISHI RAYON CO., LTD. (JP) | 2008-01-03 | — | — | US | disclosed |
| US-20070190449-A1 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | CHRM1, CHRM2, PKN2 | LMNA 548/4885NAAA 4554/4885SLC1A3 2337/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | LMNA 1080/4885NAAA 602/4885SLC1A3 1342/4885 |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | IDUA, SLC6A5, SLC6A9 | LMNA 1080/4885NAAA 602/4885SLC1A3 1342/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.