SCHEMBL27488406

SCHEMBL27488406

NCc1ccc(S(=O)(=O)ON2C(=O)c3ccccc3C2=O)cc1

nearest known ligand 0.74

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.74
ALDH1A1 P00352 9/20 0.74
MAPT P10636 9/20 0.74
F2 P00734 4/20 0.74
VDR P11473 3/20 0.74
KMT2A Q03164 8/20 0.69
HPGD P15428 7/20 0.69
MEN1 O00255 5/20 0.68
HTT P42858 3/20 0.58
LMNA P02545 2/20 0.55
THRB P10828 1/20 0.55
POLB P06746 1/20 0.49
L3MBTL1 Q9Y468 1/20 0.49
XBP1 P17861 2/20 0.48
CYP1A2 P05177 1/20 0.48
CYP3A4 P08684 1/20 0.48
CYP2C19 P33261 1/20 0.48
NPSR1 Q6W5P4 1/20 0.48
SMN1; SMN2 Q16637 1/20 0.48
CA1 P00915 3/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27842380 0.89 KDM4E (0.72) KDM4EALDH1A1MAPTF2VDR
SCHEMBL4830026 0.85 KDM4E (1.00) KDM4EALDH1A1MAPTF2VDR
SCHEMBL27489087 0.84 KDM4E (0.53) KDM4EALDH1A1MAPTF2VDR
SCHEMBL8488334 0.83 KDM4E (0.75) KDM4EALDH1A1MAPTF2VDR
SCHEMBL64368 0.82 KDM4E (1.00) KDM4EALDH1A1MAPTF2VDR
SCHEMBL29370293 0.81 VDR (1.00) KDM4EALDH1A1MAPTF2VDR
SCHEMBL64277 0.81 VDR (1.00) KDM4EALDH1A1MAPTF2VDR
SCHEMBL2468373 0.81 KMT2A (1.00) KDM4EALDH1A1MAPTF2VDR
SCHEMBL8778106 0.80 KDM4E (0.76) KDM4EALDH1A1MAPTF2VDR
SCHEMBL7886651 0.80 KDM4E (0.75) KDM4EALDH1A1MAPTF2VDR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1574234-A Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2005-02-02 CN claimed
CN-104115256-A Photocured product and method for producing the same CANON KK 2014-10-22 CN disclosed
CN-102186815-B Sulfonium derivatives and the use therof as latent acids BASF SE 2014-07-30 CN disclosed
CN-103907174-A Method of forming film CANON KK 2014-07-02 CN disclosed
CN-102341731-B Coloring composition, color filter and color liquid crystal display element JSR CORP 2014-06-25 CN disclosed
CN-101952269-B Sulphonium salt initiators BASF SE 2014-06-25 CN disclosed
CN-102026967-B Sulphonium salt initiators CIBA HOLDING INC 2013-09-18 CN disclosed
CN-102089870-B Gate insulating material, gate insulating film, and organic field effect transistor TORAY INDUSTRIES 2013-08-28 CN disclosed
CN-1908816-B Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material JSR CORP 2012-09-05 CN disclosed
CN-102548744-A Manufacturing method for plastic member and plastic member CANON KK 2012-07-04 CN disclosed
CN-100383665-C Onium salts and their use as latent acids CIBA SC HOLDING AG (CH) 2008-04-23 CN disclosed
CN-101002090-A Method of printing a time-temperature indicator based on azo coupling reactions onto a substrate CIBA SC HOLDING AG (CH) 2007-07-18 CN disclosed
CN-1989455-A Oxime derivatives and the use therof as latent acids CIBA SC HOLDING AG (CH) 2007-06-27 CN disclosed
CN-1934499-A Positively radiation-sensitive resin composition JSR CORP (JP) 2007-03-21 CN disclosed
CN-1908816-A Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material JSR CORP (JP) 2007-02-07 CN disclosed
CN-1751269-A Halogenated oxime derivatives and their use as latent acids CIBA SC HOLDING AG (CH) 2006-03-22 CN disclosed
CN-1662853-A Onium salts and their use as latent acids CIBA SC HOLDING AG (CH) 2005-08-31 CN disclosed
CN-1196029-C Positive radiation-sensitive composition TORAY INDUSTRIES (JP) 2005-04-06 CN disclosed
CN-1574234-A Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2005-02-02 CN disclosed
CN-1287630-A Positive radiation-sensitive composition TORAY INDUSTRIES (JP) 2001-03-14 CN disclosed