SCHEMBL2754789

SCHEMBL2754789

CCC(=O)C(C)(C)CCCC(CC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.39
RIPK1 Q13546 3/20 0.39
OPRM1 P35372 3/20 0.38
DRD3 P35462 2/20 0.38
DRD2 P14416 1/20 0.38
LMNA P02545 2/20 0.37
CCR5 P51681 1/20 0.36
GABBR2 O75899 1/20 0.36
GABBR1 Q9UBS5 1/20 0.36
POLB P06746 2/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
GRIN2D O15399 2/20 0.35
GRIN1 Q05586 2/20 0.35
GRIN2A Q12879 2/20 0.35
GRIN2B Q13224 2/20 0.35
GRIN2C Q14957 2/20 0.35
NR1I2 O75469 1/20 0.35
CNR1 P21554 1/20 0.35
CNR2 P34972 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18098119 0.75 CHRM1 (0.46) OPRM1DRD3LMNAPOLBMEN1
Bicarbonate SCHEMBL27563509 0.74 NR1I2 (0.56) POLBNR1I2CNR2
SCHEMBL23009730 0.74 RIPK1 (0.40) MAPTRIPK1LMNACCR5GABBR2
SCHEMBL9865640 0.73 LMNA (0.42) LMNACCR5NR1I2HDAC8HDAC6
SCHEMBL1144366 0.73 CCR5 (0.44) LMNACCR5GABBR2GABBR1POLB
SCHEMBL1144368 0.73 LMNA (0.47) LMNACCR5NR1I2
SCHEMBL9693648 0.73 TBXAS1 (0.52) MAPTNR1I2HDAC3HDAC4HDAC1
SCHEMBL28343866 0.73 NR1I2 (0.49) MAPTOPRM1LMNACCR5POLB
SCHEMBL598619 0.73 NR1I2 (0.49) MAPTOPRM1LMNACCR5POLB
SCHEMBL15868611 0.72 MAPT (0.44) MAPTRIPK1LMNACCR5GABBR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8399174-B2 Method of forming fine patterns using a block copolymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-03-19 US disclosed
US-20120003587-A1 METHOD OF FORMING FINE PATTERNS USING A BLOCK COPOLYMER SAMSUNG ELECTRONICS CO., LTD (KR) 2012-01-05 US disclosed
US-8039196-B2 Method of forming fine patterns using a block copolymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-10-18 US disclosed
US-20090042146-A1 Method of forming fine patterns using a block copolymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-12 US disclosed