⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL49256 | 0.93 | — | — | |
| SCHEMBL9160703 | 0.71 | — | — | |
| Lindane SCHEMBL4466086 | 0.68 | LMNA (0.46) | — | |
| SCHEMBL28793374 | 0.68 | — | — | |
| SCHEMBL874375 | 0.67 | — | — | |
| SCHEMBL15611834 | 0.67 | — | — | |
| SCHEMBL512265 | 0.62 | — | — | |
| SCHEMBL10381020 | 0.57 | — | — | |
| SCHEMBL59490 | 0.57 | — | — | |
| SCHEMBL58777 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118053906-A | Semiconductor device and manufacturing method thereof | 中国电子科技集团公司第二十四研究所 | 2024-05-17 | — | — | CN | disclosed |
| CN-114823524-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2022-07-29 | — | — | CN | disclosed |
| CN-102446958-B | Carbon silicon-germanium silicon heterojunction 1T-DRAM (Single Transistor Dynamic Random Access Memory) structure on insulator and forming method thereof | SHANGHAI HUALI MICROELECT CORP | 2014-11-05 | — | — | CN | disclosed |
| CN-102446958-B | Carbon silicon-germanium silicon heterojunction 1T-DRAM (Single Transistor Dynamic Random Access Memory) structure on insulator and forming method thereof | SHANGHAI HUALI MICROELECT CORP | 2014-11-05 | — | — | CN | disclosed |
| CN-102446958-A | Carbon-silicon-germanium-silicon heterojunction 1T-DRAM structure on insulator and forming method | SHANGHAI HUALI MICROELECT CORP | 2012-05-09 | — | — | CN | disclosed |
| CN-102446958-A | Carbon-silicon-germanium-silicon heterojunction 1T-DRAM structure on insulator and forming method | SHANGHAI HUALI MICROELECT CORP | 2012-05-09 | — | — | CN | disclosed |
| CN-101312191-B | Semiconductor structure and forming method thereof | TAIWAN SEMICONDUCTOR MFG | 2010-07-28 | — | — | CN | disclosed |
| CN-101312191-A | Semiconductor structure and forming method thereof | TAIWAN SEMICONDUCTOR MFG (CN) | 2008-11-26 | — | — | CN | disclosed |