SCHEMBL2779900

SCHEMBL2779900

CC[C](C)Oc1ccc(C#N)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 2/20 0.50
MAPT P10636 4/20 0.49
ALDH1A1 P00352 3/20 0.49
RAB9A P51151 2/20 0.46
CYP2A6 P11509 2/20 0.45
LMNA P02545 2/20 0.42
KDM4E B2RXH2 1/20 0.42
MEN1 O00255 1/20 0.42
POLB P06746 1/20 0.42
PKM P14618 1/20 0.42
MAPK1 P28482 1/20 0.42
KMT2A Q03164 1/20 0.42
IL18 Q14116 1/20 0.42
MMP2 P08253 2/20 0.42
MMP3 P08254 1/20 0.42
MAOB P27338 1/20 0.42
HRH3 Q9Y5N1 1/20 0.41
TP53 P04637 1/20 0.41
F2 P00734 1/20 0.41
NOS3 P29474 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4878038 0.79 MAPT (0.50) MGLLMAPTALDH1A1RAB9ACYP2A6
SCHEMBL7039270 0.79 ESR1 (0.58) MGLLMAPTALDH1A1RAB9ALMNA
Hydrochloric Acid SCHEMBL23467078 0.78 ESR1 (0.56) MGLLMAPTALDH1A1RAB9ALMNA
SCHEMBL24968440 0.76 MAPT (0.47) MGLLMAPTALDH1A1RAB9ACYP2A6
SCHEMBL337646 0.76 LMNA (0.57) MGLLMAPTALDH1A1RAB9ALMNA
SCHEMBL23609748 0.75 MMP2 (0.54) MGLLMAPTALDH1A1RAB9ALMNA
SCHEMBL6670976 0.73 MAPT (0.53) MGLLMAPTALDH1A1RAB9ALMNA
SCHEMBL10466576 0.73 MGLL (0.57) MGLLMAPTALDH1A1RAB9ALMNA
SCHEMBL509602 0.73 NQO1 (0.67) MAPTALDH1A1RAB9ACYP2A6LMNA
Alcohol SCHEMBL29171755 0.72 NQO1 (0.58) MGLLMAPTALDH1A1RAB9ACYP2A6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10289002-B2 Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-14 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-20170285460-A1 MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK HOYA CORPORATION (JP) 2017-10-05 US disclosed
US-9645494-B2 Resist underlayer film forming composition containing low molecular weight dissolution accelerator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-05-09 US disclosed
US-20160363863-A1 ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
EP-2095189-B1 COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL IND LTD (JP) 2013-07-10 EP disclosed
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100291483-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-18 US disclosed
US-20100075253-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL INDUSTRIES , LTD. (JP) 2010-03-25 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed