SCHEMBL2779902

SCHEMBL2779902

[CH2]CCCOc1ccc(C#N)cc1

nearest known ligand 0.53

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HRH3 Q9Y5N1 9/20 0.53
MAPT P10636 2/20 0.51
ALDH1A1 P00352 1/20 0.51
HRH2 P25021 6/20 0.50
HRH1 P35367 6/20 0.50
MMP2 P08253 3/20 0.50
MAOB P27338 1/20 0.48
MMP3 P08254 3/20 0.47
HDAC1 Q13547 1/20 0.46
HDAC2 Q92769 1/20 0.46
MMP1 P03956 1/20 0.46
MMP9 P14780 1/20 0.46
MMP13 P45452 1/20 0.46
TBXAS1 P24557 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9653965 0.94 MMP2 (0.58) HRH3HRH2HRH1MMP2MMP3
SCHEMBL22645668 0.94 HRH3 (0.54) HRH3MAPTALDH1A1HRH2HRH1
SCHEMBL72415 0.89 ALDH1A1 (0.53) HRH3MAPTALDH1A1HRH2HRH1
SCHEMBL9852404 0.89 MMP3 (0.57) HRH3HRH2HRH1MMP2MMP3
SCHEMBL28887343 0.87 HDAC1 (0.58) HRH3ALDH1A1HRH2HRH1MMP2
SCHEMBL16798363 0.87 HDAC1 (0.58) HRH3ALDH1A1HRH2HRH1MMP2
SCHEMBL7384498 0.87 HRH3 (0.59) HRH3MAPTALDH1A1HRH2HRH1
SCHEMBL5519875 0.87 HRH3 (0.62) HRH3MAPTALDH1A1HRH2HRH1
SCHEMBL7983991 0.85 HRH3 (0.66) HRH3MAPTALDH1A1HRH2HRH1
SCHEMBL7387284 0.85 HRH3 (0.66) HRH3MAPTALDH1A1HRH2HRH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10840397-B2 Highly-fluorescent and photo-stable chromophores for wavelength conversion NITTO DENKO CORPORATION (JP) 2020-11-17 US claimed
CN-113354590-A Quinazolinone compound for antagonizing NOD1/2 receptor signal pathway 宁波康柏睿格医药科技有限公司 2021-09-07 CN disclosed
US-10289002-B2 Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-14 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-20170285460-A1 MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK HOYA CORPORATION (JP) 2017-10-05 US disclosed
US-9645494-B2 Resist underlayer film forming composition containing low molecular weight dissolution accelerator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-05-09 US disclosed
US-20160363863-A1 ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
EP-2095189-B1 COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL IND LTD (JP) 2013-07-10 EP disclosed
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100291483-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-18 US disclosed
US-20100075253-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL INDUSTRIES , LTD. (JP) 2010-03-25 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed