SCHEMBL2799324

SCHEMBL2799324

C[Si](C)([SiH3])c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.44
ESR2 Q92731 1/20 0.44
TSHR P16473 3/20 0.36
NR1H2 P55055 2/20 0.35
NR1H3 Q13133 2/20 0.35
ACHE P22303 2/20 0.35
LMNA P02545 1/20 0.35
ALOX12 P18054 1/20 0.35
MAPT P10636 1/20 0.34
GPR3 P46089 2/20 0.33
NPC1 O15118 3/20 0.32
RAB9A P51151 3/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
ALDH1A1 P00352 1/20 0.32
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
TP53 P04637 1/20 0.30
MAPK1 P28482 1/20 0.30
CA4 P22748 1/20 0.30
BRD4 O60885 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2796775 0.81 ESR1 (0.44) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL15641905 0.77 ESR1 (0.46) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL9590359 0.77 ESR1 (0.41) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL787696 0.75 ESR1 (0.44) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL239179 0.73 ESR1 (0.48) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL439492 0.73 ESR1 (0.48) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL6143069 0.73 ESR1 (0.36) ESR1ESR2TSHRACHELMNA
SCHEMBL63526 0.73 ESR1 (0.70) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL2169977 0.73 ESR1 (0.48) ESR1ESR2TSHRNR1H2NR1H3
SCHEMBL92396 0.73 ESR1 (0.48) ESR1ESR2TSHRNR1H2NR1H3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109661717-B Substrate processing method 株式会社斯库林集团 2023-08-22 CN disclosed
CN-115010744-A Method for synthesizing allyl silicon compound by photo-catalysis of eosin Y 扬州工业职业技术学院 2022-09-06 CN disclosed
US-7749563-B2 Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS, INC. (US) 2010-07-06 US disclosed
US-7319068-B2 Method of depositing low k barrier layers APPLIED MATERIALS, INC. (US) 2008-01-15 US disclosed
US-20070042610-A1 METHOD OF DEPOSITING LOW K BARRIER LAYERS APPLIED MATERIALS, INC. 2007-02-22 US disclosed
US-7125813-B2 Method of depositing low K barrier layers APPLIED MATERIALS, INC. (US) 2006-10-24 US disclosed
US-7049249-B2 Method of improving stability in low k barrier layers APPLIED MATERIALS (US) 2006-05-23 US disclosed
EP-1588410-A1 A METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS Applied Materials, Inc. (US) 2005-10-26 EP disclosed
EP-1558784-A2 TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE Applied Materials, Inc. (US) 2005-08-03 EP disclosed
US-20050042858-A1 Method of improving stability in low k barrier layers LI LIHUA (US) 2005-02-24 US disclosed
US-20040198070-A1 Method of depositing low K barrier layers APPLIED MATERIALS, INC. 2004-10-07 US disclosed
US-6790788-B2 Method of improving stability in low k barrier layers APPLIED MATERIALS INC. 2004-09-14 US disclosed
WO-2004064136-A1 A METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS APPLIED MATERIALS, INC. (US) 2004-07-29 WO disclosed
US-20040137756-A1 METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS APPLIED MATERIALS, INC. 2004-07-15 US disclosed
US-6759327-B2 Method of depositing low k barrier layers APPLIED MATERIALS INC. 2004-07-06 US disclosed
WO-2004033752-A2 TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE APPLIED MATERIALS, INC. (US) 2004-04-22 WO disclosed
US-20040067308-A1 Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS, INC. 2004-04-08 US disclosed
WO-2003043073-A2 A METHOD OF DEPOSITING LOW K BARRIER LAYERS APPLIED MATERIALS, INC. (US) 2003-05-22 WO disclosed
US-20030068881-A1 Method of depositing low k barrier layers APPLIED MATERIALS, INC. 2003-04-10 US disclosed