Pentane

Pentane

SCHEMBL28218834

CCCCC.O=C1CCC(=O)N1O

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FAAH O00519 3/20 0.39
MGLL Q99685 3/20 0.39
KMT2A Q03164 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
LMNA P02545 1/20 0.35
TSHR P16473 1/20 0.35
CYP1A2 P05177 2/20 0.34
ALDH1A1 P00352 1/20 0.34
GAA P10253 1/20 0.34
MAPT P10636 1/20 0.34
THRB P10828 1/20 0.34
CHRM2 P08172 1/20 0.33
CHRM4 P08173 1/20 0.33
CHRM5 P08912 1/20 0.33
CHRM1 P11229 1/20 0.33
DRD2 P14416 1/20 0.33
CHRM3 P20309 1/20 0.33
DRD4 P21917 1/20 0.33
DRD3 P35462 1/20 0.33
KDM4E B2RXH2 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL64005 0.84 EPHX2 (0.40) FAAHMGLLKMT2ASMN1; SMN2
Alcohol SCHEMBL20856433 0.84 ALDH1A1 (0.33) LMNATSHRALDH1A1KDM4E
Valeric Acid SCHEMBL29098873 0.83 AKR1B1 (0.50) KMT2ALMNATSHRCYP1A2ALDH1A1
SCHEMBL64127 0.83 EPHX2 (0.42) FAAHMGLLKMT2ASMN1; SMN2CYP1A2
Ethyl Chloride SCHEMBL28823879 0.82 LMNA (0.31) LMNA
Hexanoate SCHEMBL2098722 0.82 AKR1B1 (0.59) KMT2ALMNATSHRCYP1A2ALDH1A1
SCHEMBL338264 0.81 KDM4E (0.34) ALDH1A1GAAKDM4EPOLB
SCHEMBL1123 0.81
SCHEMBL785147 0.81
Decanoic Acid SCHEMBL8712557 0.80 GPR84 (0.61) KMT2ALMNATSHRCYP1A2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108137478-A Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method 三菱瓦斯化学株式会社 2018-06-08 CN disclosed