SCHEMBL2901786

SCHEMBL2901786

O=C1c2ccccc2C(=O)N1OS(=O)(=O)c1ccc(C(F)(F)F)cc1

nearest known ligand 0.72

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 8/20 0.72
▸ MEN1 O00255 5/20 0.72
▸ KDM4E B2RXH2 10/20 0.69
▸ MAPT P10636 10/20 0.69
▸ ALDH1A1 P00352 9/20 0.69
▸ HPGD P15428 7/20 0.69
▸ VDR P11473 2/20 0.68
▸ F2 P00734 5/20 0.61
▸ HTT P42858 4/20 0.55
▸ LMNA P02545 3/20 0.51
▸ THRB P10828 1/20 0.51
▸ XBP1 P17861 2/20 0.48
▸ CYP1A2 P05177 1/20 0.48
▸ CYP3A4 P08684 1/20 0.48
▸ CYP2C19 P33261 1/20 0.48
▸ NPSR1 Q6W5P4 1/20 0.48
▸ SMN1; SMN2 Q16637 1/20 0.48
▸ MASP2 O00187 1/20 0.47
▸ POLB P06746 1/20 0.46
▸ L3MBTL1 Q9Y468 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL547931 0.88 KDM4E (0.71) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL6743844 0.87 KDM4E (0.62) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL2903856 0.84 KDM4E (0.51) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL2468373 0.84 KMT2A (1.00) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL3823140 0.84 KMT2A (0.51) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL3824343 0.84 KMT2A (0.51) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL547930 0.82 KMT2A (0.50) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL64368 0.82 KDM4E (1.00) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL64277 0.81 VDR (1.00) KMT2AMEN1KDM4EMAPTALDH1A1
SCHEMBL29370293 0.81 VDR (1.00) KMT2AMEN1KDM4EMAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104662049-B Photocurable composition and method for producing film using same 佳能株式会社 2020-06-02 — — CN disclosed
CN-109964327-B Field-effect transistor, method for manufacturing same, wireless communication device using same, and commodity label 东丽株式会社 2020-05-19 — — CN disclosed
CN-104698756-B Positive photosensitive resin composition, pattern forming method, thin film transistor array substrate and liquid crystal display device 奇美实业股份有限公司 2019-03-22 — — CN disclosed
US-9448474-B2 Positive photosensitive resin composition and pattern forming method CHI MEI CORPORATION (TW) 2016-09-20 — — US disclosed
US-20150160554-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE CHI MEI CORPORATION (TW) 2015-06-11 — — US disclosed
CN-104698756-A Positive photosensitive resin composition, pattern forming method, thin film transistor array substrate and liquid crystal display device CHI MEI CORP 2015-06-10 — — CN disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 — — US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 — — US disclosed
US-7977029-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2011-07-12 — — US disclosed
US-7812194-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2010-10-12 — — US disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 — — EP disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 — — EP disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 — — EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 — — US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 — — EP disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 — — EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 — — US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 — — EP disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 — — US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 — — EP disclosed
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