SCHEMBL547930

SCHEMBL547930

O=C1c2ccc3ccccc3c2C(=O)N1OS(=O)(=O)c1ccc(C(F)(F)F)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 7/20 0.50
▸ MEN1 O00255 5/20 0.50
▸ ALDH1A1 P00352 7/20 0.47
▸ MAPT P10636 7/20 0.47
▸ KDM4E B2RXH2 6/20 0.47
▸ HPGD P15428 5/20 0.47
▸ HTT P42858 2/20 0.47
▸ VDR P11473 2/20 0.47
▸ LMNA P02545 2/20 0.44
▸ THRB P10828 1/20 0.44
▸ F2 P00734 1/20 0.43
▸ POLB P06746 1/20 0.43
▸ L3MBTL1 Q9Y468 1/20 0.43
▸ PTGS2 P35354 1/20 0.42
▸ ENPP3 O14638 1/20 0.39
▸ ENPP1 P22413 1/20 0.39
▸ DNMT1 P26358 1/20 0.37
▸ RAB9A P51151 1/20 0.36
▸ SMN1; SMN2 Q16637 1/20 0.36
▸ PARL Q9H300 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL462228 0.88 KMT2A (0.66) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL72297 0.86 ALDH1A1 (0.63) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL462046 0.84 VDR (0.68) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL2901786 0.82 KMT2A (0.72) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL461884 0.81 KMT2A (0.40) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL184225 0.80 DNMT1 (0.42) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL547931 0.79 KDM4E (0.71) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL60581 0.78 KMT2A (0.45) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL548394 0.78 ALDH1A1 (0.47) KMT2AMEN1ALDH1A1MAPTKDM4E
SCHEMBL65319 0.76 MAPT (0.47) KMT2AMEN1ALDH1A1MAPTKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 — — US claimed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 — — US disclosed
US-20230096312-A1 RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-03-30 — — US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 — — US disclosed
CN-115151863-A Resist composition and method of using the same 三菱瓦斯化学株式会社 2022-10-04 — — CN disclosed
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-22 — — US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 — — US disclosed
CN-108137478-B Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method 三菱瓦斯化学株式会社 2021-09-28 — — CN disclosed
CN-107924123-B Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same 学校法人关西大学 2021-08-06 — — CN disclosed
EP-3279727-B1 COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT MITSUBISHI GAS CHEMICAL CO (JP) 2021-06-09 — — EP disclosed
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-21 — — US disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 — — EP disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 — — EP disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 — — EP disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 — — US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 — — EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 — — US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 — — EP disclosed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 — — US disclosed
EP-0843220-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-05-20 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 KMT2A 2526/4885MEN1 1260/4885ALDH1A1 3830/4885
US-11256170-B2 Compound, resist composition, and method for forming resist pattern using it RDX, SLC11A2, FBL KMT2A 1321/4885MEN1 3286/4885ALDH1A1 2889/4885
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition ARID2, RAD1, RAD51 KMT2A 443/4885MEN1 2881/4885ALDH1A1 1654/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R KMT2A 633/4885MEN1 1512/4885ALDH1A1 1540/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R KMT2A 633/4885MEN1 1512/4885ALDH1A1 1540/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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