SCHEMBL9891196

SCHEMBL9891196

CS(=O)(=O)ON=C(C#N)c1ccc(C(C#N)=NOS(C)(=O)=O)cc1

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
PLA2G7 Q13093 1/20 0.36
MAPT P10636 1/20 0.32
HSD17B10 Q99714 1/20 0.32
NPC1 O15118 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18431381 1.00 PLA2G7 (0.36) PLA2G7MAPTHSD17B10NPC1
SCHEMBL19418706 1.00 PLA2G7 (0.36) PLA2G7MAPTHSD17B10NPC1
SCHEMBL10233179 0.93 ENPP2 (0.37) PLA2G7MAPT
SCHEMBL14375142 0.93 HSD17B10 (0.38) PLA2G7MAPTHSD17B10
SCHEMBL5229634 0.93 ALDH1A1 (0.36) PLA2G7MAPTHSD17B10NPC1
SCHEMBL6706095 0.93 ALDH1A1 (0.36) PLA2G7MAPTHSD17B10NPC1
SCHEMBL10233186 0.92 PLA2G7 (0.33) PLA2G7
SCHEMBL296477 0.92 GSK3B (0.36) PLA2G7MAPTNPC1
SCHEMBL36927 0.92 GSK3B (0.36) PLA2G7MAPTNPC1
SCHEMBL36190 0.91 PLA2G7 (0.46) PLA2G7MAPTNPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 149 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11803122-B2 Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-31 US disclosed
US-11754926-B2 Method of forming resist pattern, resist composition and method of producing the same TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
WO-2023162552-A1 CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD FOR SUBSTRATE WITH TEMPLATE, AND PRODUCTION METHOD FOR PLATED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
US-20230273521-A1 CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-08-31 US disclosed
WO-2023162551-A1 METHOD FOR PRODUCING PLATED SHAPED ARTICLE 東京応化工業株式会社 2023-08-31 WO disclosed
US-20230229084-A1 CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-20 US disclosed
EP-2980058-B1 COMPOSITION CONTAINING VINYL-GROUP-CONTAINING COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
US-11550221-B2 Chemically amplified positive-type photosensitive resin composition, photosensitive dry film, method of manufacturing photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template, method of manufacturing plated article, and nitrogen-containing aromatic heterocyclic compound TOKYO OHKA KOG YO CO., LTD. (JP) 2023-01-10 US disclosed
US-20090042129-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-20090035697-A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKAKOGYO CO.,LTD. (JP) 2009-02-05 US disclosed
US-20090035691-A1 POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-05 US disclosed
US-20090029291-A1 POSITIVE RESIST COMPOSITION FOR THIN-FILM IMPLANTATION PROCESS AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-29 US disclosed
US-20090004598-A1 Resist Composition And Method For Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-01 US disclosed
US-20080311512-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PATTERN FORMING TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080145784-A1 Positive Resist Composition, Method For Resist Pattern Formation and Compound TOKYO OHKA KOGYO CO., LTD. (JP) 2008-06-19 US disclosed
US-20080131819-A1 Process For Producing Resist Pattern and Conductor Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-06-05 US disclosed
US-20080026321-A1 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090035691-A1 POSITIVE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND COMPOUND POLR1A, CA1, POLR2A PLA2G7 2874/4885MAPT 3037/4885HSD17B10 2348/4885
US-20080145784-A1 Positive Resist Composition, Method For Resist Pattern Formation and Compound POLR1A, POLR2A, POLR2B PLA2G7 3023/4885MAPT 3002/4885HSD17B10 2303/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.