SCHEMBL2967397

SCHEMBL2967397

CC(=CCOC1C2CC3CC(C2)CC1C3)C(=O)O

nearest known ligand 0.38

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
FDFT1 P37268 2/20 0.38
HSD11B1 P28845 2/20 0.35
CD81 P60033 2/20 0.34
EPHX1 P07099 1/20 0.31
SCN9A Q15858 1/20 0.30
MAPT P10636 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2967393 1.00 FDFT1 (0.38) FDFT1HSD11B1CD81EPHX1SCN9A
SCHEMBL3280822 0.74 HSD11B1 (0.35) HSD11B1EPHX1MAPT
SCHEMBL2434576 0.72 HSD11B1 (0.38) FDFT1HSD11B1EPHX1
SCHEMBL19798408 0.71 HSD11B1 (0.38) FDFT1HSD11B1EPHX1SCN9AL3MBTL1
SCHEMBL3369271 0.70 CD81 (0.37) CD81
SCHEMBL9929460 0.70 HSD11B1 (0.35) HSD11B1CD81EPHX1MAPTL3MBTL1
SCHEMBL465988 0.69 EPHX1 (0.36) CD81EPHX1
SCHEMBL16284412 0.69 HSD11B1 (0.48) FDFT1HSD11B1EPHX1SCN9AL3MBTL1
SCHEMBL2739903 0.68 HSD11B1 (0.36) FDFT1HSD11B1EPHX1SCN9AL3MBTL1
SCHEMBL21385044 0.68 HSD11B1 (0.40) FDFT1HSD11B1EPHX1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2399169-B1 ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS BREWER SCIENCE INC (US) 2019-04-17 EP disclosed
US-7858286-B2 Positive resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-12-28 US disclosed
US-7803512-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-09-28 US disclosed
US-7781144-B2 Positive resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-08-24 US disclosed
US-20090098483-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
WO-2009038635-A1 PROCESS FOR PREPARING COMPOSITIONALLY UNIFORM COPOLYMERS DUPONT ELECTRONIC POLYMERS L.P. (US) 2009-03-26 WO disclosed
US-20090076230-A1 Process for preparing compositionally uniform copolymers DUPONT ELECTRONIC POLYMERS L.P. 2009-03-19 US disclosed
US-20090068588-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
WO-2009019574-A1 PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-02-12 WO disclosed
US-20090042148-A1 Photoresist Composition for Deep UV and Process Thereof AZ ELECTRONIC MATERIALS USA CORP. 2009-02-12 US disclosed
US-20090035698-A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-05 US disclosed