SCHEMBL2997719

SCHEMBL2997719

C=CC(=O)OC(C)(C)C.OC(C=Cc1ccccc1)=Cc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EGFR P00533 1/20 0.43
GLA P06280 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
LMNA P02545 4/20 0.41
ALDH1A1 P00352 4/20 0.41
HDAC3 O15379 2/20 0.41
HDAC4 P56524 2/20 0.41
HDAC1 Q13547 2/20 0.41
HDAC2 Q92769 2/20 0.41
HDAC8 Q9BY41 2/20 0.41
HDAC6 Q9UBN7 2/20 0.41
PLIN1 O60240 2/20 0.41
MAPT P10636 2/20 0.41
RECQL P46063 2/20 0.41
PLIN5 Q00G26 2/20 0.41
ABHD5 Q8WTS1 2/20 0.41
TNKS O95271 1/20 0.41
HCAR2 Q8TDS4 1/20 0.41
HDAC7 Q8WUI4 1/20 0.41
HDAC10 Q969S8 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28120691 0.82 CYP2C19 (0.45) EGFRGLATDP1LMNAALDH1A1
SCHEMBL28634688 0.82 CYP2C19 (0.45) EGFRGLATDP1LMNAALDH1A1
SCHEMBL4144000 0.82 GLA (0.45) EGFRGLATDP1LMNAALDH1A1
SCHEMBL5008693 0.82 EGFR (0.42) EGFRGLATDP1LMNAALDH1A1
Styrene SCHEMBL6903124 0.81 ALDH1A1 (0.48) EGFRGLATDP1LMNAALDH1A1
Styrene SCHEMBL5008696 0.81 ALDH1A1 (0.48) EGFRGLATDP1LMNAALDH1A1
SCHEMBL126771 0.80 GLA (0.55) EGFRGLATDP1LMNAALDH1A1
SCHEMBL1006098 0.80 GLA (0.55) EGFRGLATDP1LMNAALDH1A1
SCHEMBL6037018 0.78 KMT2A (0.49) EGFRGLATDP1LMNAALDH1A1
Styrene SCHEMBL27545176 0.78 ALDH1A1 (0.45) EGFRGLATDP1LMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9366963-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-20150147697-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-28 US disclosed
US-20100190107-A1 CYCLIC COMPOUND, PHOTORESIST BASE MATERIAL AND PHOTORESIST COMPOSITION IDEMITSU KOSAN CO. LTD (JP) 2010-07-29 US disclosed
EP-1449833-B1 BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION WAKO PURE CHEM IND LTD (JP) 2009-09-09 EP disclosed
US-7374857-B2 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2008-05-20 US disclosed
US-7318992-B2 Lift-off positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-15 US disclosed
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-20050227171-A1 Lift-off positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-13 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2005-02-17 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1449833-A1 BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION Wako Pure Chemical Industries, Ltd. (JP) 2004-08-25 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed
US-6365321-B1 COPOLYMER WITH ACRYLATE HAVING ACID LABILE GROUP, HOMOGENOUSLY BLENDED WITH PHENOLIC POLYMER WHICH IS PARTIALLY OR WHOLLY PROTECTED INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-04-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100190107-A1 CYCLIC COMPOUND, PHOTORESIST BASE MATERIAL AND PHOTORESIST COMPOSITION CRY1, PCNA, ERCC4 EGFR 1953/4885GLA 3383/4885TDP1 3032/4885
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition ASIC1, GAR1, RER1 EGFR 2445/4885GLA 3492/4885TDP1 2088/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.