Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSK | P43235 | 2/20 | 0.38 |
| ▸ | FDPS | P14324 | 1/20 | 0.34 |
| ▸ | CA2 | P00918 | 6/20 | 0.34 |
| ▸ | CA1 | P00915 | 3/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | PRKCA | P17252 | 1/20 | 0.32 |
| ▸ | PRKCD | Q05655 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 2/20 | 0.31 |
| ▸ | ACHE | P22303 | 1/20 | 0.31 |
| ▸ | BACE1 | P56817 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | ATM | Q13315 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | DNM1 | Q05193 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13362447 | 0.92 | SMPD1 (0.39) | FDPSCA2 | |
| SCHEMBL11616023 | 0.92 | CA2 (0.38) | FDPSCA2CA1 | |
| SCHEMBL562769 | 0.91 | CHRM1 (0.33) | CTSKFDPSPRKCAPRKCDTSHR | |
| SCHEMBL4276617 | 0.89 | FDPS (0.39) | FDPSCA1 | |
| SCHEMBL28372905 | 0.88 | CA2 (0.38) | CTSKFDPSCA2CA1MAPK1 | |
| SCHEMBL7949871 | 0.88 | SMPD1 (0.41) | FDPSCA2 | |
| SCHEMBL7951543 | 0.88 | SMPD1 (0.41) | FDPSCA2 | |
| SCHEMBL9193889 | 0.88 | SMPD1 (0.41) | FDPSCA2 | |
| SCHEMBL11561950 | 0.88 | SMPD1 (0.41) | FDPSCA2 | |
| SCHEMBL7951553 | 0.88 | SMPD1 (0.41) | FDPSCA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 313 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240077802-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-07 | — | — | US | claimed |
| US-20230384673-A1 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | claimed |
| US-7410631-B2 | Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom | APS LABORATORY (US) | 2008-08-12 | — | — | US | claimed |
| US-20060199886-A1 | Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom | APS LABORATORY | 2006-09-07 | — | — | US | claimed |
| US-20260140444-A1 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-21 | — | — | US | disclosed |
| US-20260130180-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-07 | — | — | US | disclosed |
| US-12607937-B2 | Photoresist top coating material for etching rate control | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-04-21 | — | — | US | disclosed |
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-16 | — | — | US | disclosed |
| US-20260079395-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT | TOKYO OHKA KOGYO CO LTD (JP) | 2026-03-19 | — | — | US | disclosed |
| US-12578640-B2 | Photosensitive material for photoresist and lithography | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-17 | — | — | US | disclosed |
| US-12566374-B2 | Photoresist composition and method of manufacturing semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-03 | — | — | US | disclosed |
| US-20260050211-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF | TOKYO OHKA KOGYO CO LTD (JP) | 2026-02-19 | — | — | US | disclosed |
| EP-1672047-A1 | ABSORPTIVE COMPOSITION FOR INFRARED RAY AND ABSORPTIVE RESIN COMPOSITION FOR INFRARED RAY | Kureha Corporation (JP) | 2006-06-21 | — | — | EP | disclosed |
| US-20060127801-A1 | Resist polymer and resist composition | MITSUBISHI RAYON CO., LTD. (JP) | 2006-06-15 | — | — | US | disclosed |
| EP-1662323-A1 | MATERIAL FOR FORMING RESIST-PROTECTING FILM FOR IMMERSION EXPOSURE PROCESS, RESIST-PROTECTING FILM MADE OF SUCH MATERIAL, AND METHOD FOR FORMING RESIST PATTERN USING SUCH RESIST-PROTECTING FILM | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-05-31 | — | — | EP | disclosed |
| US-20040191677-A1 | Positive-working chemical-amplification photoresist composition | YUKAWA HIROTO (JP) | 2004-09-30 | — | — | US | disclosed |
| US-20040023163-A1 | Positive-working chemical-amplification photoresist composition | YUKAWA HIROTO (JP) | 2004-02-05 | — | — | US | disclosed |
| EP-0985975-B1 | Positive-working chemical-amplification photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2003-03-19 | — | — | EP | disclosed |
| US-20020119393-A1 | Positive-working chemical-amplification photoresist composition | YUKAWA HIROTO (JP) | 2002-08-29 | — | — | US | disclosed |
| EP-0985975-A1 | Positive-working chemical-amplification photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-03-15 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260140444-A1 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | INO80C, INO80, NAT10 | CTSK 2686/4885FDPS 2484/4885CA2 2393/4885 |
| US-12607937-B2 | Photoresist top coating material for etching rate control | ERCC1, ERCC2, RAD23B | CTSK 720/4885FDPS 4041/4885CA2 2616/4885 |
| US-20260079395-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT | F9, AFF2, AFF1 | CTSK 3396/4885FDPS 540/4885CA2 814/4885 |
| US-12566374-B2 | Photoresist composition and method of manufacturing semiconductor device | INO80C, INO80, PI4K2B | CTSK 1707/4885FDPS 2079/4885CA2 2747/4885 |
| US-20260050211-A1 | RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND INTERMEDIATE THEREOF | RARG, RXRG, IGF1R | CTSK 4157/4885FDPS 4132/4885CA2 815/4885 |
| US-12578640-B2 | Photosensitive material for photoresist and lithography | CDH1, ALG3, TRPA1 | CTSK 3281/4885FDPS 2106/4885CA2 789/4885 |
| US-20260130180-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION | C9, C1S, ZKSCAN2 | CTSK 1373/4885FDPS 3108/4885CA2 1510/4885 |
| US-20260104643-A1 | METHOD OF FORMING PHOTORESIST PATTERN | DSTN, PFAS, DNTT | CTSK 2774/4885FDPS 80/4885CA2 3477/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.