Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KAT6A | Q92794 | 2/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | MYC | P01106 | 1/20 | 0.44 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.43 |
| ▸ | GBA1 | P04062 | 1/20 | 0.43 |
| ▸ | TTR | P02766 | 1/20 | 0.42 |
| ▸ | NFE2L2 | Q16236 | 4/20 | 0.42 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.42 |
| ▸ | KCNA5 | P22460 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.41 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.41 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.41 |
| ▸ | CES2 | O00748 | 1/20 | 0.41 |
| ▸ | CES1 | P23141 | 1/20 | 0.41 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL231071 | 1.00 | KAT6A (0.46) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8379692 | 0.98 | NFE2L2 (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8379211 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8379679 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8381980 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8376452 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8378097 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8379463 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL3919693 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 | |
| SCHEMBL8378084 | 0.98 | KAT6A (0.44) | KAT6ATSHRSMN1; SMN2MYCHSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122071451-A | Onium salt, chemically amplified positive resist composition, and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| CN-122072437-A | Chemically amplified negative resist composition and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| CN-122010808-A | Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2026-05-12 | — | — | CN | disclosed |
| CN-122010809-A | Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2026-05-12 | — | — | CN | disclosed |
| US-20260003266-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-01 | — | — | US | disclosed |
| US-20250377589-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-11 | — | — | US | disclosed |
| US-20250370335-A1 | SULFONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-20250370337-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| CN-119735511-A | Monomer, polymer, chemically amplified resist composition and pattern forming method | 信越化学工业株式会社 | 2025-04-01 | — | — | CN | disclosed |
| CN-119613298-A | Onium salt, chemically amplified positive resist composition, and resist pattern forming method | 信越化学工业株式会社 | 2025-03-14 | — | — | CN | disclosed |
| CN-118112887-A | Resist composition and pattern forming method | 信越化学工业株式会社 | 2024-05-31 | — | — | CN | disclosed |
| CN-117886728-A | Onium salt, chemically amplified resist composition and pattern forming method | 信越化学工业株式会社 | 2024-04-16 | — | — | CN | disclosed |
| CN-117586162-A | Onium salt, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2024-02-23 | — | — | CN | disclosed |
| CN-117263782-A | Polymerizable monomer, polymer compound, resist composition, and pattern forming method | 信越化学工业株式会社 | 2023-12-22 | — | — | CN | disclosed |
| US-20230408921-A1 | Polymerizable Monomer, Polymer Compound, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-21 | — | — | US | disclosed |
| CN-117229188-A | Onium salt, resist composition, and pattern forming method | 信越化学工业株式会社 | 2023-12-15 | — | — | CN | disclosed |
| CN-117069633-A | Novel sulfonium salt, resist composition and pattern forming method | 信越化学工业株式会社 | 2023-11-17 | — | — | CN | disclosed |
| CN-116500862-A | Resist material and pattern forming method | 信越化学工业株式会社 | 2023-07-28 | — | — | CN | disclosed |
| CN-116500861-A | Resist material and pattern forming method | 信越化学工业株式会社 | 2023-07-28 | — | — | CN | disclosed |
| CN-116500860-A | Resist material and pattern forming method | 信越化学工业株式会社 | 2023-07-28 | — | — | CN | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260003266-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LEF1, EIF2S1, NHERF1 | KAT6A 1434/4885TSHR 3907/4885SMN1; SMN2 1890/4885 |
| US-20250370335-A1 | SULFONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | ETV6, ELF3, ELAVL1 | KAT6A 1864/4885TSHR 3755/4885SMN1; SMN2 3794/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.