SCHEMBL3057474

SCHEMBL3057474

C=C(C)C(=O)OC12CC3CC(CC(C3)C1CCCC)C2

nearest known ligand 0.35

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.35
EPHX2 P34913 13/20 0.34
KMT2A Q03164 3/20 0.31
ALDH1A1 P00352 2/20 0.31
MEN1 O00255 2/20 0.31
EPHX1 P07099 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3053347 0.92 EPHX2 (0.32) TSHREPHX2KMT2AALDH1A1MEN1
SCHEMBL217041 0.86 TSHR (0.32) TSHREPHX2KMT2AALDH1A1MEN1
SCHEMBL3058363 0.86 EPHX2 (0.37) TSHREPHX2KMT2AALDH1A1MEN1
SCHEMBL10151069 0.81 HSD11B1 (0.37)
SCHEMBL24244833 0.79 DPP4 (0.31)
SCHEMBL17750341 0.78 EPHX2 (0.33) EPHX2ALDH1A1EPHX1
SCHEMBL75673 0.76 ALDH1A1 (0.31) EPHX2ALDH1A1
SCHEMBL251058 0.76 NAAA (0.32) EPHX2ALDH1A1
SCHEMBL16241191 0.75 ALDH1A1 (0.31) ALDH1A1
SCHEMBL6333499 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4267708-B1 THERMALLY RESPONSIVE BRUSH POLYMERS HAVING A COPOLYMER BACKBONE AND COPOLYMER ARMS INFINEUM INT LTD (GB) 2025-07-02 EP disclosed
US-12281203-B2 Thermally responsive brush polymers having a copolymer backbone and copolymer arms INFINEUM INTERNATIONAL LIMITED (GB) 2025-04-22 US disclosed
US-20240309155-A1 Thermally Responsive Brush Polymers Having a Copolymer Backbone and Copolymer Arms INFINEUM INTERNATIONAL LIMITED (GB) 2024-09-19 US disclosed
CN-110032042-B Negative photoresist composition for laser ablation and method of use thereof 默克专利有限公司 2022-05-27 CN disclosed
CN-108139670-B Negative photoresist composition for laser ablation and method of use thereof 默克专利有限公司 2021-07-09 CN disclosed
CN-110032042-A Negative photoresist composition and its application method for laser ablation AZ电子材料卢森堡有限公司 2019-07-19 CN disclosed
CN-108139670-A Negative photoresist composition for laser ablation and method of use thereof AZ电子材料卢森堡有限公司 2018-06-08 CN disclosed
CN-102056913-A Sulfonium derivatives and the use thereof as latent acids BASF SE 2011-05-11 CN disclosed
CN-101952248-A Sulphonium salt initiators BASF SE 2011-01-19 CN disclosed
US-7833690-B2 Photoacid generators and lithographic resists comprising the same THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (US) 2010-11-16 US disclosed
US-7776505-B2 High resolution resists for next generation lithographies THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (US) 2010-08-17 US disclosed
CN-101410756-A Negative photoresist compositions AZ ELECTRONIC MATERIALS USA (US) 2009-04-15 CN disclosed
US-20070117043-A1 Photoacid generators and lithographic resists comprising the same NATIONAL SCIENCE FOUNDATION 2007-05-24 US disclosed
US-20060121390-A1 High resolution resists for next generation lithographies NATIONAL SCIENCE FOUNDATION 2006-06-08 US disclosed