SCHEMBL30849716

SCHEMBL30849716

CCCCOc1c2ccccc2c(OCCCC)c2c(CCCC)cccc12

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CSNK1A1 P48729 1/20 0.40
CSNK1D P48730 1/20 0.40
PRKCD Q05655 1/20 0.40
PAK1 Q13153 1/20 0.40
CAMK2B Q13554 1/20 0.40
CAMK2G Q13555 1/20 0.40
CAMK2D Q13557 1/20 0.40
TAOK1 Q7L7X3 1/20 0.40
GAA P10253 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
LTA4H P09960 2/20 0.38
SLC2A1 P11166 1/20 0.37
CYP1A2 P05177 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
LIPG Q9Y5X9 1/20 0.36
ALOX5 P09917 1/20 0.36
PTGS2 P35354 1/20 0.36
HTR1B P28222 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2401301 1.00 CSNK1A1 (0.40) CSNK1A1CSNK1DPRKCDPAK1CAMK2B
SCHEMBL27664398 0.95 CSNK1A1 (0.37) CSNK1A1CSNK1DPRKCDPAK1CAMK2B
SCHEMBL16741963 0.91 MPO (0.36) CSNK1A1CSNK1DPRKCDPAK1CAMK2B
SCHEMBL30529719 0.89 SLC2A1 (0.40) GAATDP1L3MBTL1LTA4HSLC2A1
SCHEMBL27974811 0.87 THRA (0.34) CSNK1A1CSNK1DPRKCDPAK1CAMK2B
SCHEMBL31080976 0.83 FAAH (0.41) LTA4HSLC2A1CYP2C9CNR1CNR2
SCHEMBL27664396 0.83 KDM4E (0.48) CSNK1A1CSNK1DPRKCDPAK1CAMK2B
SCHEMBL29363526 0.81 LTA4H (0.52) GAATDP1L3MBTL1LTA4HSLC2A1
SCHEMBL442080 0.81 LTA4H (0.52) GAATDP1L3MBTL1LTA4HSLC2A1
SCHEMBL31081036 0.81 MAPT (0.38) L3MBTL1SLC2A1CNR1CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111413849-B Photosensitive composition, preparation method thereof, pattern forming method and application 常州强力先端电子材料有限公司 2024-03-01 CN disclosed