Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL21799233 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL27782591 | 0.87 | — | — | |
| Water SCHEMBL168325 | 0.82 | — | — | |
| Water SCHEMBL21358072 | 0.82 | — | — | |
| Water SCHEMBL9063269 | 0.82 | — | — | |
| Water SCHEMBL10378772 | 0.82 | — | — | |
| Water SCHEMBL9723088 | 0.82 | — | — | |
| Water SCHEMBL20582743 | 0.82 | — | — | |
| Water SCHEMBL22471762 | 0.82 | — | — | |
| Water SCHEMBL9317662 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 319 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112864009-A | Method for manufacturing semiconductor device, high-K dielectric structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-05-28 | — | — | CN | claimed |
| CN-107785247-A | The manufacture method of metal gates and semiconductor devices | 中芯国际集成电路制造(上海)有限公司 | 2018-03-09 | — | — | CN | claimed |
| CN-107623033-A | More raceway groove all-around-gate pole devices and its manufacture method | 中芯国际集成电路制造(上海)有限公司 | 2018-01-23 | — | — | CN | claimed |
| CN-107316809-A | Method for manufacturing semiconductor device, high-K dielectric structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2017-11-03 | — | — | CN | claimed |
| CN-103545180-B | The forming method of metal gates | 中芯国际集成电路制造(上海)有限公司 | 2017-07-14 | — | — | CN | claimed |
| CN-104051498-B | Metal oxide semiconductor field-effect transistor (MOSFET) with step oxide | 台湾积体电路制造股份有限公司 | 2017-04-26 | — | — | CN | claimed |
| CN-103681331-B | Fin field effect pipe and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2016-06-29 | — | — | CN | claimed |
| CN-103367159-B | The forming method of semiconductor structure | 中芯国际集成电路制造(上海)有限公司 | 2016-06-29 | — | — | CN | claimed |
| CN-103715134-B | Semiconductor devices and forming method thereof | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2016-05-25 | — | — | CN | claimed |
| CN-103681331-A | Fin field-effect transistor (FET) and fin FET forming method | SEMICONDUCTOR MFG INT CORP | 2014-03-26 | — | — | CN | claimed |
| CN-103545180-A | Formation method of metal gate | SEMICONDUCTOR MFG INT CORP | 2014-01-29 | — | — | CN | claimed |
| CN-103545178-A | Formation method of metal gate | SEMICONDUCTOR MFG INT CORP | 2014-01-29 | — | — | CN | claimed |
| CN-103367159-A | Semiconductor structure formation method | SEMICONDUCTOR MFG INT SHANGHAI | 2013-10-23 | — | — | CN | claimed |
| CN-112864009-A | Method for manufacturing semiconductor device, high-K dielectric structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-05-28 | — | — | CN | disclosed |
| CN-107316809-B | Method for manufacturing semiconductor device, high-K dielectric structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-03-16 | — | — | CN | disclosed |
| CN-112133632-A | Method for reducing stress of HEMT (high electron mobility transistor) and HEMT | 深圳市汇芯通信技术有限公司 | 2020-12-25 | — | — | CN | disclosed |
| CN-101661901-A | Method for manufacturing semiconductor element and semiconductor element | TAIWAN SEMICONDUCTOR MFG | 2010-03-03 | — | — | CN | disclosed |
| US-20080260624-A1 | Process for Production of Composition | SAKAI CHEMICAL INDUSTRY, CO., LTD. (JP) | 2008-10-23 | — | — | US | disclosed |
| CN-101128395-A | Composition making method | SAKAI CHEMICAL INDUSTRY KABUSH (JP) | 2008-02-20 | — | — | CN | disclosed |
| EP-1860069-A1 | METHOD FOR PRODUCING COMPOSITION | SAKAI CHEMICAL INDUSTRY CO., LTD., (JP) | 2007-11-28 | — | — | EP | disclosed |