SCHEMBL3200306

SCHEMBL3200306

CCCC(C)[Si](OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 1/20 0.39
AKR1A1 P14550 1/20 0.39
CHRM3 P20309 1/20 0.39
HTR2A P28223 1/20 0.39
HTR2C P28335 1/20 0.39
ADRA1A P35348 1/20 0.39
HRH1 P35367 1/20 0.39
DRD3 P35462 1/20 0.39
SLC6A3 Q01959 1/20 0.39
HDAC1 Q13547 1/20 0.39
HDAC2 Q92769 1/20 0.39
TDP1 Q9NUW8 1/20 0.39
TSHR P16473 4/20 0.33
CYP3A4 P08684 2/20 0.33
NFKB1 P19838 2/20 0.33
NPSR1 Q6W5P4 2/20 0.33
CHRNB2 P17787 1/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33
CHRNA4 P43681 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5266548 0.82 MTNR1A (0.40) TDP1TSHRALDH1A1LMNAHSD17B10
SCHEMBL3214845 0.82 TSHR (0.35) CHRM1TSHRALDH1A1LMNAHSD17B10
SCHEMBL11344133 0.71 FDPS (0.41) ALDH1A1
SCHEMBL6267833 0.71 TSHR (0.41) CHRM1TSHRALDH1A1
SCHEMBL509444 0.71 TSHR (0.41) CHRM1TSHRALDH1A1
SCHEMBL2400701 0.69 TSHR (0.32) CHRM1AKR1A1CHRM3HTR2AHTR2C
SCHEMBL19897496 0.68 ALDH1A1 (0.35) TSHRALDH1A1LMNAHSD17B10
SCHEMBL475940 0.68 TSHR (0.35) CHRM1TSHRALDH1A1LMNAHSD17B10
SCHEMBL3209259 0.68 TSHR (0.35) CHRM1TSHRALDH1A1LMNAHSD17B10
SCHEMBL7091995 0.68 ALDH1A1 (0.31) ALDH1A1LMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
CN-1757445-B Composition for preparing low dielectric material containing solvent AIR PROD & CHEM 2010-12-01 CN disclosed
US-20100041234-A1 Process For Restoring Dielectric Properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-02-18 US disclosed
US-20090298671-A1 Compositions for Preparing Low Dielectric Materials Containing Solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-12-03 US disclosed
CN-100539037-C The composition of preparation low dielectric material AIR PROD & CHEM (US) 2009-09-09 CN disclosed
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US disclosed
US-7482676-B2 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-01-27 US disclosed
CN-101312129-A Activated chemical process for enhancing material properties of dielectric film AIR PROD & CHEM (US) 2008-11-26 CN disclosed
US-20080264672-A1 Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-10-30 US disclosed
CN-101252030-A Compositions for preparing low dielectric materials containing solvents AIR PROD & CHEM (US) 2008-08-27 CN disclosed
EP-1583141-A2 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-10-05 EP disclosed
EP-1577935-A2 Compositions for preparing low dielectric materials containing solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-09-21 EP disclosed
US-20050196974-A1 Compositions for preparing low dielectric materials containing solvents VERSUM MATERIALS US, LLC 2005-09-08 US disclosed
US-20050196535-A1 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. 2005-09-08 US disclosed
EP-1561841-A2 Cleaning CVD Chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-08-10 EP disclosed
CN-1651159-A Cleaning CVD chambers following deposition of porogen-containing materials AIR PROD & CHEM (US) 2005-08-10 CN disclosed
US-20050161060-A1 Cleaning CVD chambers following deposition of porogen-containing materials AIR PRODUCTS AND CHEMICALS, INC. 2005-07-28 US disclosed
CN-1487567-A Composition for producing low dielectric material �����Ʒ�뻯ѧ��˾ 2004-04-07 CN disclosed
US-20040048960-A1 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. 2004-03-11 US disclosed
EP-1376671-A1 Compositions for preparing materials with a low dielectric constant AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-01-02 EP disclosed