SCHEMBL3203941

SCHEMBL3203941

CC(C)[SiH](F)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.33
TAAR1 Q96RJ0 4/20 0.31
SLC6A2 P23975 2/20 0.31
MAOA P21397 1/20 0.31
SLC6A4 P31645 1/20 0.31
SLC6A3 Q01959 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
CYP2A6 P11509 1/20 0.31
ADORA2A P29274 1/20 0.31
ADORA1 P30542 1/20 0.31
LMNA P02545 2/20 0.30
TSHR P16473 1/20 0.30
ALOX12 P18054 1/20 0.30
ACHE P22303 1/20 0.30
ADRA2A P08913 1/20 0.30
ADRA2C P18825 1/20 0.30
CYP2D6 P10635 1/20 0.30
HIF1A Q16665 1/20 0.30
KDM4E B2RXH2 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1325645 0.72 TDP1 (0.36) TDP1TAAR1SLC6A2MAOASLC6A4
SCHEMBL380702 0.72 TDP1 (0.36) TDP1TAAR1SLC6A2MAOASLC6A4
Fluoride SCHEMBL27639901 0.70 TDP1 (0.35) TDP1TAAR1SLC6A2MAOASLC6A4
SCHEMBL8992273 0.70 TDP1 (0.35) TDP1TAAR1SLC6A2MAOASLC6A4
SCHEMBL3202384 0.69
SCHEMBL31302718 0.69 TDP1 (0.39) TDP1TAAR1SLC6A2SLC6A4SLC6A3
SCHEMBL705419 0.68 TDP1 (0.33) TDP1TAAR1SLC6A2MAOASLC6A4
SCHEMBL15302680 0.68 TDP1 (0.33) TDP1TAAR1SLC6A2MAOASLC6A4
SCHEMBL7183345 0.68 LMNA (0.34) TDP1LMNATSHRALOX12ADRA2A
SCHEMBL706815 0.68 TDP1 (0.33) TDP1TAAR1SLC6A2MAOASLC6A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed