SCHEMBL3296262

SCHEMBL3296262

CC(=O)Oc1ccc(C(c2ccc(C3CC4C=CC3C4)cc2)(C(F)(F)F)C(F)(F)F)cc1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.34
HSD17B10 Q99714 1/20 0.33
KDM1A O60341 1/20 0.33
CUL4A Q13619 1/20 0.32
KMT2A Q03164 4/20 0.32
MEN1 O00255 3/20 0.32
MAPT P10636 2/20 0.32
KIF11 P52732 1/20 0.32
KDM4E B2RXH2 1/20 0.32
TTR P02766 1/20 0.32
TP53 P04637 1/20 0.32
CYP3A4 P08684 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
POLB P06746 1/20 0.32
PKM P14618 1/20 0.32
EPHX2 P34913 2/20 0.32
GLA P06280 1/20 0.32
ELANE P08246 1/20 0.31
ATM Q13315 1/20 0.31
ESR1 P03372 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3292906 0.89 LMNA (0.35) LMNAHSD17B10KDM1ACUL4AKMT2A
SCHEMBL1739262 0.88 LMNA (0.43) LMNAHSD17B10KDM1ACUL4AKMT2A
SCHEMBL3291051 0.87 KDM1A (0.37) LMNAHSD17B10KDM1ACUL4AKMT2A
SCHEMBL3292358 0.85 HSD17B10 (0.46) LMNAHSD17B10KDM1ACUL4AKMT2A
SCHEMBL3292302 0.83 ELANE (0.49) LMNAHSD17B10CUL4AKMT2AMEN1
SCHEMBL3295278 0.81 LMNA (0.37) LMNAHSD17B10KDM1ACUL4AKMT2A
SCHEMBL3292272 0.81 ELANE (0.39) LMNAHSD17B10CUL4AKMT2AMEN1
SCHEMBL3297791 0.81 HSD17B10 (0.42) LMNAHSD17B10KMT2AMEN1MAPT
SCHEMBL6939142 0.78 LMNA (0.53) LMNAHSD17B10KMT2AMEN1MAPT
SCHEMBL15698038 0.77 KDM4E (0.42) LMNAHSD17B10KMT2AMEN1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7727705-B2 High etch resistant underlayer compositions for multilayer lithographic processes FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2010-06-01 US disclosed
WO-2008140846-A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-11-20 WO disclosed
US-20080206667-A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. 2008-08-28 US disclosed