SCHEMBL3337293

SCHEMBL3337293

CCO[Si](OCC)(OCC)c1cccc(Cl)c1Cl

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PNMT P11086 2/20 0.36
IDO1 P14902 2/20 0.36
TSHR P16473 1/20 0.34
ALDH1A1 P00352 3/20 0.34
LMNA P02545 2/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
GAA P10253 1/20 0.34
CNR2 P34972 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
NFKB1 P19838 1/20 0.33
KDM4E B2RXH2 1/20 0.33
POLB P06746 1/20 0.33
TAAR1 Q96RJ0 1/20 0.33
CCR4 P51679 1/20 0.33
P2RX7 Q99572 1/20 0.33
MAPT P10636 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
TAS1R3 Q7RTX0 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL241382 0.84 LMNA (0.36) PNMTIDO1TSHRALDH1A1LMNA
SCHEMBL3338297 0.78 TSHR (0.38) PNMTIDO1TSHRALDH1A1LMNA
SCHEMBL29520127 0.77 ALDH1A1 (0.33) TSHRALDH1A1CYP1A2
SCHEMBL331176 0.77 ALDH1A1 (0.33) TSHRALDH1A1CYP1A2
SCHEMBL13027884 0.75 CYP1A2 (0.35) TSHRCYP1A2
SCHEMBL1639905 0.75 CYP1A2 (0.35) CYP1A2
Benzene SCHEMBL28867986 0.74 LTA4H (0.37) TSHRALDH1A1SMN1; SMN2KDM4EL3MBTL1
SCHEMBL13027835 0.72 SMN1; SMN2 (0.34) ALDH1A1SMN1; SMN2KDM4EPOLB
SCHEMBL10398399 0.72 LMNA (0.36) PNMTIDO1TSHRALDH1A1LMNA
SCHEMBL1109615 0.71 PKM (0.34) TSHRALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
CN-101133364-B Composition for resist underlayer film and method for producing same JSR CORP 2013-03-20 CN disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
CN-101133364-A Composition for resist underlayer film and method for producing same JSR CORP (JP) 2008-02-27 CN disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed