SCHEMBL3337579

SCHEMBL3337579

[O-][S+](c1cc(Cl)cc(O)c1O)c1cc(Cl)cc(O)c1O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 6/20 0.39
HSD17B10 Q99714 5/20 0.39
ALDH1A1 P00352 4/20 0.39
HPGD P15428 2/20 0.39
CYP3A4 P08684 3/20 0.39
RECQL P46063 2/20 0.39
TDP1 Q9NUW8 1/20 0.34
TTR P02766 2/20 0.33
GABRA1 P14867 1/20 0.32
GABRB1 P18505 1/20 0.32
ERN1 O75460 1/20 0.32
HIF1A Q16665 2/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CYP2C9 P11712 1/20 0.31
CYP2C19 P33261 1/20 0.31
KDM4E B2RXH2 1/20 0.31
MEN1 O00255 1/20 0.31
SLC22A2 O15244 1/20 0.31
SLC22A1 O15245 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29904878 1.00 TSHR (0.39) TSHRHSD17B10ALDH1A1HPGDCYP3A4
Bithionoloxide SCHEMBL69373 0.82 HSD17B10 (0.56) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL12786119 0.77 HSD17B10 (0.50) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL6355918 0.74 TSHR (0.56) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL10539835 0.73 HSD17B10 (0.50) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL12786124 0.72 ALDH1A1 (0.45) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL29904874 0.70 HSD17B10 (0.40) TSHRHSD17B10ALDH1A1HPGDCYP3A4
SCHEMBL5372785 0.70 HSD17B10 (0.40) TSHRHSD17B10ALDH1A1HPGDCYP3A4
Bithionoloxide SCHEMBL11549920 0.68 TSHR (0.40) TSHRHSD17B10ALDH1A1CYP3A4RECQL
SCHEMBL70194 0.67 HSD17B10 (0.72) TSHRHSD17B10ALDH1A1HPGDCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240213072-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-27 US disclosed
US-20240199924-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
EP-4310157-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
EP-4309893-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
CN-117157738-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
CN-117157739-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
US-10607876-B2 Method for processing mold material and method for manufacturing structural body TOKYO OHKA KOGYO CO., LTD. (JP) 2020-03-31 US disclosed
US-10112377-B2 Supporting member separation method and supporting member separation apparatus TOKYO OHKA KOGYO CO., LTD. (JP) 2018-10-30 US disclosed
EP-2133366-B1 FINE FIBROUS CELLULOSE MATERIAL AND METHOD FOR PRODUCING THE SAME AIST (JP) 2018-02-21 EP disclosed
US-9837298-B2 Method for manufacturing laminate, method for manufacturing sealed substrate laminate, sealed substrate laminate, and sealed substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-05 US disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6083665-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2000-07-04 US disclosed
US-6071673-A Method for the formation of resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-06 US disclosed
US-5948847-A ACRYLATED ESTER CROSSLINKED WITH NITROGEN CONTAINING ORGANIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-07 US disclosed
US-5925495-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-20 US disclosed
US-5908738-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1999-06-01 US disclosed
US-5756255-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1998-05-26 US disclosed