SCHEMBL5372785

SCHEMBL5372785

[O-][S+](c1cc(Cl)c(O)c(O)c1O)c1cc(Cl)c(O)c(O)c1O

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 6/20 0.40
TSHR P16473 5/20 0.40
TTR P02766 3/20 0.40
CYP3A4 P08684 3/20 0.40
RECQL P46063 3/20 0.40
ALDH1A1 P00352 2/20 0.40
HPGD P15428 4/20 0.37
THRB P10828 3/20 0.37
MAPK1 P28482 3/20 0.37
ALOX15 P16050 3/20 0.36
ALOX12 P18054 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
HIF1A Q16665 3/20 0.36
CYP1A2 P05177 2/20 0.36
CYP2C19 P33261 2/20 0.36
CYP2C9 P11712 1/20 0.36
GPR35 Q9HC97 1/20 0.35
CASP1 P29466 2/20 0.35
MEN1 O00255 3/20 0.32
KMT2A Q03164 3/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29904874 1.00 HSD17B10 (0.40) HSD17B10TSHRTTRCYP3A4RECQL
Bithionoloxide SCHEMBL69373 0.79 HSD17B10 (0.56) HSD17B10TSHRTTRCYP3A4RECQL
SCHEMBL30678712 0.71 TSHR (0.46) HSD17B10TSHRCYP3A4ALDH1A1HPGD
SCHEMBL3341213 0.71 TSHR (0.46) HSD17B10TSHRCYP3A4ALDH1A1HPGD
SCHEMBL12786124 0.70 ALDH1A1 (0.45) HSD17B10TSHRTTRCYP3A4RECQL
SCHEMBL9621812 0.70 HSD17B10 (0.50) HSD17B10TSHRTTRCYP3A4RECQL
SCHEMBL29904878 0.70 TSHR (0.39) HSD17B10TSHRTTRCYP3A4RECQL
SCHEMBL3337579 0.70 TSHR (0.39) HSD17B10TSHRTTRCYP3A4RECQL
SCHEMBL30402191 0.67 ALDH1A1 (0.31) HSD17B10TSHRALDH1A1HPGD
SCHEMBL29001612 0.67 ALDH1A1 (0.31) HSD17B10TSHRALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240213072-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-27 US disclosed
US-20240199924-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
EP-4310157-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
EP-4309893-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
CN-117157739-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
CN-117157738-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
US-10607876-B2 Method for processing mold material and method for manufacturing structural body TOKYO OHKA KOGYO CO., LTD. (JP) 2020-03-31 US disclosed
US-10112377-B2 Supporting member separation method and supporting member separation apparatus TOKYO OHKA KOGYO CO., LTD. (JP) 2018-10-30 US disclosed
US-9837298-B2 Method for manufacturing laminate, method for manufacturing sealed substrate laminate, sealed substrate laminate, and sealed substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-05 US disclosed
EP-2757136-B1 METHOD USING AN ADHESIVE COMPOSITION FOR BONDING WAFER AND SUPPORTING BODY FOR SAID WAFER TOKYO OHKA KOGYO CO LTD (JP) 2017-11-01 EP disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6083665-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2000-07-04 US disclosed
US-6071673-A Method for the formation of resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-06 US disclosed
US-5948847-A ACRYLATED ESTER CROSSLINKED WITH NITROGEN CONTAINING ORGANIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-07 US disclosed
US-5925495-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-20 US disclosed
US-5908738-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1999-06-01 US disclosed
US-5756255-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1998-05-26 US disclosed