SCHEMBL3337792

SCHEMBL3337792

[O-][S+](c1cc(O)ccc1O)c1cc(O)ccc1O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.43
HSD17B10 Q99714 4/20 0.43
TYR P14679 3/20 0.43
LMNA P02545 3/20 0.43
ALOX15 P16050 2/20 0.43
NR1I2 O75469 1/20 0.43
CYP2C9 P11712 1/20 0.43
MIF P14174 1/20 0.43
HTT P42858 1/20 0.43
NFE2L2 Q16236 1/20 0.43
PTGS1 P23219 1/20 0.39
CA12 O43570 6/20 0.38
CA2 P00918 6/20 0.38
CA9 Q16790 6/20 0.38
CA14 Q9ULX7 6/20 0.38
CA1 P00915 5/20 0.38
CA7 P43166 4/20 0.38
ALOX5 P09917 3/20 0.38
MAOB P27338 1/20 0.38
PTGS2 P35354 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30678706 1.00 ALDH1A1 (0.43) ALDH1A1HSD17B10TYRLMNAALOX15
SCHEMBL563090 0.80 TYR (0.41) ALDH1A1HSD17B10TYRLMNAALOX15
SCHEMBL12786119 0.76 HSD17B10 (0.50) ALDH1A1HSD17B10LMNAALOX15NR1I2
SCHEMBL9296266 0.76 TRPA1 (0.52) ALDH1A1HSD17B10LMNAALOX15HTT
SCHEMBL8977691 0.74 TYR (0.35) ALDH1A1HSD17B10TYRLMNAALOX15
Hydrochloric Acid SCHEMBL11157061 0.73 ALDH1A1 (0.46) ALDH1A1HSD17B10TYRLMNAALOX15
SCHEMBL9297808 0.73 ALDH1A1 (0.59) ALDH1A1HSD17B10TYRLMNAALOX15
SCHEMBL9539791 0.72 TYR (0.42) ALDH1A1HSD17B10TYRLMNAALOX15
SCHEMBL9297619 0.72 ALOX5 (0.57) ALDH1A1HSD17B10LMNAALOX15CYP2C9
SCHEMBL6938683 0.71 ALOX15 (0.41) ALDH1A1HSD17B10TYRLMNAALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240213072-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-27 US disclosed
US-20240199924-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
EP-4310157-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
EP-4309893-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-01-24 EP disclosed
CN-117157738-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
CN-117157739-A Laminate, stripper composition, and method for producing processed semiconductor substrate 日产化学株式会社 2023-12-01 CN disclosed
WO-2022210262-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE 日産化学株式会社 2022-10-06 WO disclosed
US-10607876-B2 Method for processing mold material and method for manufacturing structural body TOKYO OHKA KOGYO CO., LTD. (JP) 2020-03-31 US disclosed
US-10112377-B2 Supporting member separation method and supporting member separation apparatus TOKYO OHKA KOGYO CO., LTD. (JP) 2018-10-30 US disclosed
EP-2133366-B1 FINE FIBROUS CELLULOSE MATERIAL AND METHOD FOR PRODUCING THE SAME AIST (JP) 2018-02-21 EP disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6083665-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2000-07-04 US disclosed
US-6071673-A Method for the formation of resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-06 US disclosed
US-5948847-A ACRYLATED ESTER CROSSLINKED WITH NITROGEN CONTAINING ORGANIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 1999-09-07 US disclosed
US-5925495-A Photoresist laminate and method for patterning using the same TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-20 US disclosed
US-5908738-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1999-06-01 US disclosed
US-5756255-A Undercoating composition for photolithography TOKYO OHKA KOGYO CO., LTD. (JP) 1998-05-26 US disclosed