SCHEMBL3341648

SCHEMBL3341648

CO[Si](Cc1ccccc1)(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.42
LTA4H P09960 1/20 0.41
TSHR P16473 4/20 0.40
CALM1 P0DP23 1/20 0.39
CA4 P22748 2/20 0.38
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA7 P43166 1/20 0.38
CA9 Q16790 1/20 0.38
CA14 Q9ULX7 1/20 0.38
ALDH1A1 P00352 4/20 0.37
IDO1 P14902 2/20 0.37
LOXL2 Q9Y4K0 1/20 0.36
TRPA1 O75762 1/20 0.36
KDM4E B2RXH2 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
AGXT P21549 1/20 0.36
CYP3A4 P08684 1/20 0.36
MAPT P10636 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL534084 0.89 TP53 (0.42) TP53LTA4HTSHRCALM1CA4
SCHEMBL15302769 0.82 SMN1; SMN2 (0.34) TP53LTA4HTSHRALDH1A1TDP1
SCHEMBL15302019 0.82 SMN1; SMN2 (0.34) TP53LTA4HTSHRALDH1A1CYP3A4
SCHEMBL104953 0.80 TP53 (0.42) TP53LTA4HTSHRCALM1CA4
SCHEMBL2804442 0.80 TP53 (0.42) TP53LTA4HTSHRCALM1CA4
SCHEMBL79015 0.79 TSHR (0.43) TP53TSHRCALM1ALDH1A1IDO1
SCHEMBL109029 0.78 TSHR (0.41) TP53LTA4HTSHRCALM1ALDH1A1
SCHEMBL534142 0.78 TSHR (0.41) TP53LTA4HTSHRCALM1ALDH1A1
Hydrochloric Acid SCHEMBL27819728 0.78 MAOA (0.40) LOXL2AGXT
SCHEMBL9505647 0.76 LTA4H (0.39) TP53LTA4HTSHRCALM1CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
WO-2022210869-A1 METHOD FOR PRODUCING SEMI-CURED PRODUCT COMPOSITE, METHOD FOR PRODUCING CURED PRODUCT COMPOSITE, AND SEMI-CURED PRODUCT COMPOSITE デンカ株式会社 2022-10-06 WO disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US disclosed
EP-3491030-B1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORP (JP) 2021-03-24 EP disclosed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US disclosed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP disclosed
CN-109715680-A The method for preparing high-cis -1,4- polydiene with the carbon monoxide-olefin polymeric based on lanthanide series 株式会社普利司通 2019-05-03 CN disclosed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
CN-101133364-A Composition for resist underlayer film and method for producing same JSR CORP (JP) 2008-02-27 CN disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-5821314-A COMPOUND OR MIXTURE OF COMPOUNDS HAVING EPOXY GROUP, REACTIVE SILICON GROUP, HYDROXYL AND/OR CARBOXYL GROUP, ORGANIC CHELATE CATALYST CONTAINING TETRAVALENT TIN ATOM AND KETO-ENOL TAUTOMER KANSAI PAINT COMPANY, LIMITED (JP) 1998-10-13 US disclosed
EP-0768326-A1 THERMOSETTING COMPOSITION AND METHOD OF FORMING TOPCOATING FILM KANSAI PAINT CO., LTD. (JP) 1997-04-16 EP disclosed
US-4831091-A USING A COORDINATION CATALYST CONTAINING A SILANETRIOL OR -DIOL AS WELL AS AN AROMATIC ESTSER; ODORLESS; STEREOSPECIFIC; PARTICLE SIZES CHISSO CORPORATION (JP) 1989-05-16 US disclosed