Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 4/20 | 0.43 |
| ▸ | CA9 | Q16790 | 4/20 | 0.43 |
| ▸ | CA1 | P00915 | 2/20 | 0.43 |
| ▸ | CA2 | P00918 | 2/20 | 0.43 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 4/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.41 |
| ▸ | THPO | P40225 | 1/20 | 0.41 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.41 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.41 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8431688 | 0.91 | GAA (0.46) | CA12CA9CA1CA2SMN1; SMN2 | |
| SCHEMBL10825103 | 0.89 | HTR6 (0.41) | CA12CA9CA1CA2SMN1; SMN2 | |
| SCHEMBL9333324 | 0.83 | ALDH1A1 (0.42) | CA12CA9CA1CA2HTT | |
| Methyldiazonium SCHEMBL6359805 | 0.81 | GAA (0.52) | CA12CA9CA1CA2SMN1; SMN2 | |
| SCHEMBL28176280 | 0.81 | KEAP1 (0.37) | CA12CA9CA2PTGS2 | |
| SCHEMBL10418852 | 0.81 | GAA (0.52) | CA12CA9CA1CA2HTT | |
| Sulfuric Acid SCHEMBL10539106 | 0.81 | GAA (0.46) | CA12CA9CA1CA2SMN1; SMN2 | |
| SCHEMBL1941777 | 0.80 | LMNA (0.37) | LMNATDP1 | |
| Sulfuric Acid SCHEMBL4738161 | 0.80 | CA4 (0.37) | CA12CA9CA1CA2SMN1; SMN2 | |
| Benzene SCHEMBL29261851 | 0.80 | GAA (0.56) | CA12CA9CA1CA2HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119080824-A | Method for synthesizing aryl stannane compound by ZnO@GO piezoelectric catalysis | 西北大学 | 2024-12-06 | — | — | CN | disclosed |
| US-11021572-B2 | Photosensitive resin composition, cured product of same, interlayer insulating film, surface protective film and electronic component | HD MICROSYSTEMS, LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-20190161580-A1 | PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT OF SAME, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM AND ELECTRONIC COMPONENT | HD MICROSYSTEMS, LTD. (JP) | 2019-05-30 | — | — | US | disclosed |
| US-8765868-B2 | Resin composition for insulating film or surface-protective film of electronic components, method for producing pattern-cured film and electronic components | HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) | 2014-07-01 | — | — | US | disclosed |
| US-8304149-B2 | Photosensitive polymer composition, method of forming relief patterns, and electronic equipment | HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) | 2012-11-06 | — | — | US | disclosed |
| US-8097386-B2 | Positive-type photosensitive resin composition, method for producing patterns, and electronic parts | HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) | 2012-01-17 | — | — | US | disclosed |
| US-7932012-B2 | Polymer (polyimide or polybenzoxazole precursor) having an acid functional group, a compound having substituent(s) derived from an amine functional group as chain extender, a photoreactive compound, and a solvent; surface protecting film or interlayer dielectric for semiconductor device | HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) | 2011-04-26 | — | — | US | disclosed |
| US-20110076458-A1 | PHOTOSENSITIVE POLYMER COMPOSITION, METHOD OF FORMING RELIEF PATTERNS, AND ELECTRONIC EQUIPMENT | NUNOMURA MASATAKA | 2011-03-31 | — | — | US | disclosed |
| US-20110027544-A1 | Resin composition for insulating film or surface-protective film of electronic components, method for producing pattern-cured film and electronic components | HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) | 2011-02-03 | — | — | US | disclosed |
| US-7851128-B2 | Photosensitive polymer composition, method of forming relief patterns, and electronic equipment | HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) | 2010-12-14 | — | — | US | disclosed |
| US-5753407-A | Polyamic acid composition | KABUSHIKI KAISHA TOSHIBA (JP) | 1998-05-19 | — | — | US | disclosed |
| US-5744281-A | P-HYDROXYSTYRENE POLYMER | KABUSHIKI KAISHA TOSHIBA (JP) | 1998-04-28 | — | — | US | disclosed |
| US-5658706-A | CONTAINING COMPOUND WHICH DECOMPOSES INTO AN ACID | KABUSHIKI KAISHA TOSHIBA (JP) | 1997-08-19 | — | — | US | disclosed |
| US-5585217-A | Polyamic acid composition | KABUSHIKI KAISHA TOSHIBA (JP) | 1996-12-17 | — | — | US | disclosed |
| US-5580702-A | COMPRISING A PHOTOSENSITIVE ACID-GENERATING COMPOUND AND A COPOLYMER OF P-HYDROXYSTYRENE AND AN ESTER OF P-CARBOXYMETHOXYSTYRENE; NONTOXIC; STEEP WALLS; HIGH SPEED; SEMICONDUCTORS | KABUSHIKI KAISHA TOSHIBA (JP) | 1996-12-03 | — | — | US | disclosed |
| EP-0396254-B1 | Photosensitive composition and pattern formation method using the same | TOSHIBA KK (JP) | 1996-07-10 | — | — | EP | disclosed |
| US-5403695-A | Photolithography; high resolution; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 1995-04-04 | — | — | US | disclosed |
| US-5332648-A | Alklali soluble phenolic polymer, cyclic ester or sulfonate which converts to the acid, an onium salt which generates an an acid on exposure to radiation | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-07-26 | — | — | US | disclosed |
| US-5326675-A | Pattern forming method including the formation of an acidic coating layer on the radiation-sensitive layer | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-07-05 | — | — | US | disclosed |
| EP-0396254-A2 | Photosensitive composition and pattern formation method using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 1990-11-07 | — | — | EP | disclosed |