SCHEMBL3377876

SCHEMBL3377876

O=C1C=C(OS(=O)(=O)c2ccccc2)C(=O)N1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 9/20 0.43
ALDH1A1 P00352 8/20 0.43
TDP1 Q9NUW8 4/20 0.43
XBP1 P17861 3/20 0.43
MPI P34949 3/20 0.43
NPSR1 Q6W5P4 3/20 0.43
HSP90AA1 P07900 2/20 0.43
PARL Q9H300 1/20 0.39
LMNA P02545 3/20 0.38
S1PR2 O95136 2/20 0.38
RAB9A P51151 2/20 0.38
OPRM1 P35372 1/20 0.38
OPRD1 P41143 1/20 0.38
KDM4E B2RXH2 4/20 0.38
KMT2A Q03164 4/20 0.38
HPGD P15428 3/20 0.38
HTT P42858 3/20 0.37
MEN1 O00255 2/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
GAA P10253 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28890094 0.83 ALDH1A1 (0.42) MAPTALDH1A1TDP1XBP1MPI
SCHEMBL7057586 0.72 SLC22A6 (0.30)
SCHEMBL6676619 0.69 HTR6 (0.48) ALDH1A1TDP1NPSR1KDM4EKMT2A
SCHEMBL30749478 0.69 GAPDH (0.57) MAPTALDH1A1TDP1XBP1MPI
SCHEMBL29209336 0.69 GAPDH (0.57) MAPTALDH1A1TDP1XBP1MPI
(Phenylsulfonyl)Benzene SCHEMBL10700102 0.67 HTR6 (0.50) MAPTALDH1A1TDP1XBP1MPI
SCHEMBL28172872 0.67 MAOA (0.53) ALDH1A1KDM4EKMT2AHPGDHTT
SCHEMBL19146 0.66 TDP1 (0.73) MAPTALDH1A1TDP1PARLRAB9A
SCHEMBL31272384 0.66 ALDH1A1 (0.68) MAPTALDH1A1TDP1PARLLMNA
SCHEMBL7981247 0.66 TDP1 (0.73) MAPTALDH1A1TDP1PARLRAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9436084-B2 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2016-09-06 US disclosed
EP-1861751-B1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO LTD (JP) 2010-11-24 EP disclosed
US-20080026321-A1 Positive-working photoresist composition for thick film formation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-01-31 US disclosed
EP-1861751-A1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2007-12-05 EP disclosed
WO-2006101250-A1 POSITIVE-WORKING PHOTORESIST COMPOSITION FOR THICK FILM FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2006-09-28 WO disclosed