Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Betaine. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 3/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | APEX1 | P27695 | 1/20 | 0.32 |
| ▸ | ACHE | P22303 | 5/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.31 |
| ▸ | RAD52 | P43351 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Betaine SCHEMBL1628919 | 0.82 | TSHR (0.42) | TSHRLMNAALDH1A1APEX1ACHE | |
| Betaine SCHEMBL9688200 | 0.81 | NPSR1 (0.45) | LMNAALDH1A1SMN1; SMN2HSP90AA1RAD52 | |
| Betaine SCHEMBL953768 | 0.80 | TDP1 (0.36) | TSHRLMNAALDH1A1APEX1ACHE | |
| Betaine SCHEMBL8958510 | 0.80 | LMNA (0.40) | TSHRLMNAALDH1A1APEX1KDM4E | |
| Betaine SCHEMBL8958531 | 0.79 | TSHR (0.39) | TSHRLMNAALDH1A1APEX1 | |
| SCHEMBL28674067 | 0.74 | HDAC8 (0.41) | ACHEKDM4E | |
| SCHEMBL29558784 | 0.74 | HDAC8 (0.41) | ACHEKDM4E | |
| Betaine SCHEMBL7046211 | 0.74 | TSHR (0.45) | TSHRLMNAALDH1A1APEX1ACHE | |
| SCHEMBL3700839 | 0.73 | PABPC1 (0.50) | ALDH1A1ACHEKDM4E | |
| Betaine SCHEMBL133669 | 0.71 | HDAC8 (0.35) | TSHRLMNAALDH1A1APEX1ACHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3084042-B1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | UMICORE GALVANOTECHNIK GMBH (DE) | 2018-11-07 | — | — | EP | claimed |
| US-20160348259-A1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | UMICORE GALVANOTECHNIK GMBH (DE) | 2016-12-01 | — | — | US | claimed |
| EP-3084042-A1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | Umicore Galvanotechnik GmbH (DE) | 2016-10-26 | — | — | EP | claimed |
| US-5169514-A | Gold or gold alloy depositions containing gold compound, alloying metal compounds and imines speed promoters | ENTHONE-OMI, INC. (US) | 1992-12-08 | — | — | US | claimed |
| EP-3084042-B1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | UMICORE GALVANOTECHNIK GMBH (DE) | 2018-11-07 | — | — | EP | disclosed |
| US-9780380-B2 | Current collector for battery and secondary battery comprising the same | SK INNOVATION CO., LTD. (KR) | 2017-10-03 | — | — | US | disclosed |
| US-20160348259-A1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | UMICORE GALVANOTECHNIK GMBH (DE) | 2016-12-01 | — | — | US | disclosed |
| US-9496218-B2 | Integrated circuit device having through-silicon-via structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-11-15 | — | — | US | disclosed |
| EP-3084042-A1 | DEPOSITION OF COPPER-TIN AND COPPER-TIN-ZINC ALLOYS FROM AN ELECTROLYTE | Umicore Galvanotechnik GmbH (DE) | 2016-10-26 | — | — | EP | disclosed |
| US-20140295238-A1 | CURRENT COLLECTOR FOR BATTERY AND SECONDARY BATTERY COMPRISING THE SAME | SK INNOVATION CO., LTD. (KR) | 2014-10-02 | — | — | US | disclosed |
| US-20140021633-A1 | Integrated Circuit Device Having Through-Silicon-Via Structure and Method of Manufacturing the Same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-23 | — | — | US | disclosed |
| US-20120193238-A1 | Compositions For Plating Copper And Methods Of Forming A Copper Bump Using The Same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-08-02 | — | — | US | disclosed |
| US-20100084277-A1 | Composition for copper plating and associated methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-08 | — | — | US | disclosed |
| US-6776893-B1 | SEMICONDUCTIVE WAFER VLSI AND ULSI INTERCONNECTS WITH VOID-FREE FILL COPPER PLATING FOR CIRCUITRY FORMING VIAS AND TRENCHES AND OTHER SMALL FEATURES LESS THAN 0.2 MICRONS WITH HIGH ASPECT RATIOS. | ENTHONE INC. | 2004-08-17 | — | — | US | disclosed |
| WO-2002103751-A2 | ELECTROPLATING CHEMISTRY FOR THE CU FILLING OF SUBMICRON FEATURES OF VLSI/ULSI INTERCONNECT | ENTHONE INC. (US) | 2002-12-27 | — | — | WO | disclosed |
| US-5169514-A | Gold or gold alloy depositions containing gold compound, alloying metal compounds and imines speed promoters | ENTHONE-OMI, INC. (US) | 1992-12-08 | — | — | US | disclosed |