Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.46 |
| ▸ | CA2 | P00918 | 2/20 | 0.46 |
| ▸ | LMNA | P02545 | 3/20 | 0.44 |
| ▸ | HTR2B | P41595 | 3/20 | 0.44 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.44 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.44 |
| ▸ | ADRA1A | P35348 | 2/20 | 0.44 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.44 |
| ▸ | GABRA1 | P14867 | 6/20 | 0.42 |
| ▸ | GABRB1 | P18505 | 4/20 | 0.42 |
| ▸ | GABRB2 | P47870 | 4/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.40 |
| ▸ | FAAH | O00519 | 1/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.40 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.40 |
| ▸ | HTR2C | P28335 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1977309 | 0.87 | HTR2B (0.42) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL26500861 | 0.84 | LMNA (0.48) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL1760529 | 0.80 | CA1 (0.70) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL4907457 | 0.80 | GABRA1 (0.50) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL17323097 | 0.77 | CA1 (0.81) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL3283300 | 0.77 | CA1 (0.52) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL20636510 | 0.77 | LMNA (0.42) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL23735726 | 0.76 | GABRA1 (0.34) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL21251576 | 0.76 | CA1 (0.44) | CA1CA2LMNAHTR2BSLC6A2 | |
| SCHEMBL4712954 | 0.76 | GABRA1 (0.52) | CA1CA2LMNAHTR2BSLC6A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-11131926-B2 | Resist composition and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-09-28 | — | — | US | disclosed |
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-09-17 | — | — | US | disclosed |
| WO-2019008025-A1 | NOVEL SULFONAMIDE CARBOXAMIDE COMPOUNDS | INFLAZOME LIMITED (IE) | 2019-01-10 | — | — | WO | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-9285679-B2 | Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-15 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223208-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-8999621-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8956802-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8859192-B2 | Negative pattern forming method and resist pattern | FUJIFILM CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8808965-B2 | Pattern forming method, pattern, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-20130266777-A1 | NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-20130202999-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-08-08 | — | — | US | disclosed |
| US-20130171562-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | US | disclosed |
| US-20120322007-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120288691-A1 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120282548-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120148957-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120094235-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-04-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10416558-B2 | Positive resist composition, resist pattern forming process, and photomask blank | LRRC47, SLIRP, COPE | CA1 1046/4885CA2 463/4885LMNA 232/4885 |
| US-11131926-B2 | Resist composition and resist patterning process | SLC11A2, RER1, GPS1 | CA1 887/4885CA2 1104/4885LMNA 2403/4885 |
| US-20120282548-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | RAD51, RER1, RXRA | CA1 795/4885CA2 3775/4885LMNA 2073/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.