Water

Water

SCHEMBL3468876

O.O.O.O.[Cl-].[Cl-].[Sr+2]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL29287882 1.00
Water SCHEMBL1831607 1.00
Water SCHEMBL430506 1.00
Water SCHEMBL29175553 1.00
Water SCHEMBL1929352 1.00
Water SCHEMBL25188536 1.00
Water SCHEMBL27479303 0.87
Water SCHEMBL27653507 0.87
Water SCHEMBL28109744 0.87
Water SCHEMBL15141509 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2204349-A1 Nano powder, nano ink and micro rod, and the fabrication methods thereof Korea Institute of Science and Technology (KR) 2010-07-07 EP claimed
US-20100167078-A1 NANO POWDER, NANO INK AND MICRO ROD, AND THE FABRICATION METHODS THEREOF KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2010-07-01 US claimed
EP-2962327-B1 COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR RICOH CO LTD (JP) 2019-09-11 EP disclosed
CN-105190854-B Coating liquid for forming metal oxide film, field effect transistor, and method for manufacturing field effect transistor 株式会社理光 2018-01-30 CN disclosed
CN-107403716-A Form coating fluid, metal-oxide film, field-effect transistor and the method for manufacturing field-effect transistor of metal-oxide film 株式会社理光 2017-11-28 CN disclosed
US-9748097-B2 Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor RICOH COMPANY, LTD. (JP) 2017-08-29 US disclosed
EP-2786405-B1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR RICOH CO LTD (JP) 2017-03-29 EP disclosed
US-9418842-B2 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor RICOH COMPANY, LTD. (JP) 2016-08-16 US disclosed
US-20160042947-A1 COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR RICOH COMPANY, LTD. (JP) 2016-02-11 US disclosed
EP-2962327-A1 COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR Ricoh Company, Ltd. (JP) 2016-01-06 EP disclosed
CN-105190854-A Coating liquid for forming metal oxide film, field effect transistor, and method for manufacturing field effect transistor RICOH CO LTD 2015-12-23 CN disclosed
US-20140299877-A1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR RICOH COMPANY, LTD. (JP) 2014-10-09 US disclosed
EP-2786405-A1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR Ricoh Company, Ltd. (JP) 2014-10-08 EP disclosed
WO-2014157733-A1 COATING LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR RICOH COMPANY, LTD. (JP) 2014-10-02 WO disclosed
CN-104081510-A Coating liquid for forming metal oxide thin film, field effect transistor, and method for manufacturing field effect transistor RICOH CO LTD 2014-10-01 CN disclosed
WO-2013081167-A1 COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR RICOH COMPANY, LTD. (JP) 2013-06-06 WO disclosed
EP-2204349-A1 Nano powder, nano ink and micro rod, and the fabrication methods thereof Korea Institute of Science and Technology (KR) 2010-07-07 EP disclosed
US-20100167078-A1 NANO POWDER, NANO INK AND MICRO ROD, AND THE FABRICATION METHODS THEREOF KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 2010-07-01 US disclosed