SCHEMBL704046

SCHEMBL704046

CCCO[Si](CC[Si](OCCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.37
LMNA P02545 1/20 0.37
MEN1 O00255 1/20 0.37
ALDH1A1 P00352 3/20 0.34
LTA4H P09960 2/20 0.34
HPGD P15428 1/20 0.34
TSHR P16473 1/20 0.33
SOAT1 P35610 1/20 0.31
TP53 P04637 1/20 0.31
TLR8 Q9NR97 1/20 0.31
GAA P10253 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702331 0.94 KMT2A (0.36) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL704098 0.92 LTA4H (0.36) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL707297 0.92 LTA4H (0.36) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL3481385 0.90 LTA4H (0.39) KMT2ALMNAMEN1LTA4HTSHR
SCHEMBL706837 0.89 LMNA (0.38) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL704016 0.88 LTA4H (0.44) ALDH1A1LTA4HTSHRSOAT1TLR8
SCHEMBL708010 0.88 LMNA (0.37) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL24433850 0.86 CYP19A1 (0.33) KMT2ALMNAMEN1LTA4HTLR8
SCHEMBL4074071 0.84 LMNA (0.35) KMT2ALMNAMEN1ALDH1A1LTA4H
SCHEMBL4077334 0.84 LMNA (0.35) KMT2ALMNAMEN1ALDH1A1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed