Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TACR1 | P25103 | 15/20 | 0.42 |
| ▸ | CACNA1F | O60840 | 1/20 | 0.37 |
| ▸ | CACNA1D | Q01668 | 1/20 | 0.37 |
| ▸ | CACNA1S | Q13698 | 1/20 | 0.37 |
| ▸ | CACNA1C | Q13936 | 1/20 | 0.37 |
| ▸ | ACP3 | P15309 | 1/20 | 0.36 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481721 | 0.85 | IDO1 (0.42) | TACR1ACP3 | |
| SCHEMBL3481761 | 0.84 | TACR1 (0.40) | TACR1CACNA1FCACNA1DCACNA1SCACNA1C | |
| SCHEMBL703380 | 0.83 | SLC6A2 (0.40) | CACNA1CACP3SIGMAR1 | |
| SCHEMBL3482494 | 0.78 | TP53 (0.44) | SIGMAR1 | |
| SCHEMBL3481483 | 0.76 | TACR1 (0.40) | TACR1CACNA1FCACNA1DCACNA1SCACNA1C | |
| SCHEMBL4171307 | 0.76 | SIGMAR1 (0.42) | CACNA1CACP3SIGMAR1 | |
| SCHEMBL3482679 | 0.75 | TACR1 (0.39) | TACR1CACNA1FCACNA1DCACNA1SCACNA1C | |
| SCHEMBL28883509 | 0.74 | SIGMAR1 (0.38) | CACNA1CSIGMAR1 | |
| SCHEMBL29066974 | 0.73 | SIGMAR1 (0.40) | CACNA1CSIGMAR1 | |
| SCHEMBL28662648 | 0.73 | SIGMAR1 (0.43) | CACNA1CSIGMAR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |