Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | TP53 | P04637 | 1/20 | 0.34 |
| ▸ | LTA4H | P09960 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL704443 | 0.89 | LTA4H (0.39) | LMNAMEN1KMT2ATP53LTA4H | |
| SCHEMBL28684433 | 0.87 | CA2 (0.36) | LMNAMEN1KMT2ATP53LTA4H | |
| SCHEMBL708782 | 0.86 | TP53 (0.36) | TP53LTA4H | |
| SCHEMBL707357 | 0.86 | LMNA (0.37) | LMNAMEN1KMT2ATP53LTA4H | |
| SCHEMBL19470883 | 0.85 | LTA4H (0.39) | LMNAMEN1KMT2ATP53LTA4H | |
| SCHEMBL28675658 | 0.84 | MAPK1 (0.34) | LMNAMEN1KMT2ALTA4HALDH1A1 | |
| SCHEMBL28667229 | 0.83 | SMN1; SMN2 (0.35) | TP53LTA4HALDH1A1HPGDSMN1; SMN2 | |
| SCHEMBL706087 | 0.81 | LTA4H (0.43) | TP53LTA4HALDH1A1HPGD | |
| SCHEMBL3482044 | 0.79 | TP53 (0.32) | LMNAMEN1KMT2ATP53LTA4H | |
| SCHEMBL641833 | 0.78 | TP53 (0.31) | TP53LTA4H |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |