SCHEMBL3482044

SCHEMBL3482044

CCC[SiH](OC)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.32
CA4 P22748 1/20 0.32
LTA4H P09960 1/20 0.31
LMNA P02545 1/20 0.31
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705849 0.88 LTA4H (0.37) TP53LTA4H
SCHEMBL27622871 0.84 LTA4H (0.37) TP53LTA4HLMNAMEN1KMT2A
SCHEMBL6268335 0.82 CA4 (0.35) TP53CA4LTA4H
SCHEMBL641833 0.81 TP53 (0.31) TP53LTA4H
SCHEMBL708782 0.81 TP53 (0.36) TP53LTA4H
SCHEMBL3481491 0.79 LMNA (0.36) TP53LTA4HLMNAMEN1KMT2A
SCHEMBL28684433 0.79 CA2 (0.36) TP53LTA4HLMNAMEN1KMT2A
SCHEMBL15327776 0.78 HDAC3 (0.37)
SCHEMBL5704254 0.78 KIF11 (0.37)
SCHEMBL28684436 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-1539862-B1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS EVONIK DEGUSSA GMBH (DE) 2009-12-09 EP disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7625975-B2 Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds DEGUSSA AG (DE) 2009-12-01 US disclosed
US-20070032609-A1 Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds DEGUSSA AG (DE) 2007-02-08 US disclosed
EP-1539862-A1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS Degussa AG (DE) 2005-06-15 EP disclosed
WO-2004018546-A1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS DEGUSSA AG (DE) 2004-03-04 WO disclosed