SCHEMBL707357

SCHEMBL707357

CCCO[SiH](CC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
LTA4H P09960 2/20 0.34
ALDH1A1 P00352 2/20 0.34
HPGD P15428 1/20 0.34
TP53 P04637 1/20 0.31
GAA P10253 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
HTT P42858 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702728 0.88 LTA4H (0.44) LTA4HALDH1A1HPGDTP53CES2
SCHEMBL3481491 0.86 LMNA (0.36) LMNAMEN1KMT2ALTA4HALDH1A1
SCHEMBL3295856 0.84 CA2 (0.38) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL705286 0.83 LTA4H (0.34) LTA4HALDH1A1TP53
SCHEMBL704443 0.82 LTA4H (0.39) LMNAMEN1KMT2ALTA4HALDH1A1
SCHEMBL28642809 0.81 KCNA3 (0.47) LTA4HALDH1A1
SCHEMBL19470883 0.80 LTA4H (0.39) LMNAMEN1KMT2ALTA4HALDH1A1
SCHEMBL3481818 0.78 LMNA (0.39) LMNAMEN1KMT2ALTA4HALDH1A1
SCHEMBL313696 0.78 LMNA (0.44) LMNAMEN1KMT2ALTA4HALDH1A1
SCHEMBL27628858 0.78 LMNA (0.32) LMNAMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed