SCHEMBL3481539

SCHEMBL3481539

CCc1ccc([SiH2]OC(CC)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.42
CRHBP P24387 1/20 0.40
CRHR2 Q13324 1/20 0.40
LMNA P02545 1/20 0.36
PPARG P37231 1/20 0.35
PPARA Q07869 1/20 0.35
OPRM1 P35372 1/20 0.35
OPRD1 P41143 1/20 0.35
OPRK1 P41145 1/20 0.35
OPRL1 P41146 1/20 0.35
L3MBTL1 Q9Y468 3/20 0.34
ATM Q13315 2/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
ALDH1A1 P00352 2/20 0.34
TAOK1 Q7L7X3 1/20 0.33
TAOK3 Q9H2K8 1/20 0.33
CHRNB2 P17787 1/20 0.33
CHRNA4 P43681 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10704774 0.91 LMNA (0.42) LMNAPOLBSLC6A4
SCHEMBL3482494 0.87 TP53 (0.44) TP53CRHBPCRHR2PPARGPPARA
SCHEMBL3482158 0.84 F2 (0.42) TP53PPARGPPARACYP19A1
SCHEMBL3482509 0.83 TP53 (0.45) TP53CRHBPCRHR2LMNAPPARG
SCHEMBL3482380 0.81 TP53 (0.43) TP53CRHBPCRHR2LMNAPPARG
SCHEMBL3482498 0.77 TP53 (0.42) TP53CRHBPCRHR2LMNAPPARG
SCHEMBL3481761 0.77 TACR1 (0.40) LMNATDP1SLC6A4
SCHEMBL106513 0.76 LMNA (0.45) LMNASLC6A4
SCHEMBL703380 0.75 SLC6A2 (0.40) OPRM1OPRK1TSHRSLC6A4
SCHEMBL15835144 0.75 TP53 (0.43) TP53CRHBPCRHR2LMNAPPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed